Mapping strain fields in ultrathin bonded Si wafers by x-ray scattering

Mourits Nielsen, Mette Poulsen, Oliver Bunk, Christian Kumpf, Robert Krarup Feidenhans'l, R.L. Johnson, Flemming Jensen, Francois Grey

    Research output: Contribution to journalJournal articleResearchpeer-review

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    Abstract

    X-ray scattering reveals the atomic displacements arising from rotational misalignment in ultrathin silicon bonded wafers. For a 4.3 nm top wafer, the strain field penetrates from the bonded interface to the surface and produces distinctive finite-size oscillations in x-ray data. Analytical calculations permit the atomic displacements throughout the thin top wafer to be modeled.
    Original languageEnglish
    JournalApplied Physics Letters
    Volume80
    Issue number18
    Pages (from-to)3412-3414
    ISSN0003-6951
    DOIs
    Publication statusPublished - 2002

    Bibliographical note

    Copyright (2002) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

    Keywords

    • DIFFRACTION
    • SILICON-WAFERS

    Cite this

    Nielsen, M., Poulsen, M., Bunk, O., Kumpf, C., Feidenhans'l, R. K., Johnson, R. L., ... Grey, F. (2002). Mapping strain fields in ultrathin bonded Si wafers by x-ray scattering. Applied Physics Letters, 80(18), 3412-3414. https://doi.org/10.1063/1.1476702
    Nielsen, Mourits ; Poulsen, Mette ; Bunk, Oliver ; Kumpf, Christian ; Feidenhans'l, Robert Krarup ; Johnson, R.L. ; Jensen, Flemming ; Grey, Francois. / Mapping strain fields in ultrathin bonded Si wafers by x-ray scattering. In: Applied Physics Letters. 2002 ; Vol. 80, No. 18. pp. 3412-3414.
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    abstract = "X-ray scattering reveals the atomic displacements arising from rotational misalignment in ultrathin silicon bonded wafers. For a 4.3 nm top wafer, the strain field penetrates from the bonded interface to the surface and produces distinctive finite-size oscillations in x-ray data. Analytical calculations permit the atomic displacements throughout the thin top wafer to be modeled.",
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    author = "Mourits Nielsen and Mette Poulsen and Oliver Bunk and Christian Kumpf and Feidenhans'l, {Robert Krarup} and R.L. Johnson and Flemming Jensen and Francois Grey",
    note = "Copyright (2002) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.",
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    Nielsen, M, Poulsen, M, Bunk, O, Kumpf, C, Feidenhans'l, RK, Johnson, RL, Jensen, F & Grey, F 2002, 'Mapping strain fields in ultrathin bonded Si wafers by x-ray scattering', Applied Physics Letters, vol. 80, no. 18, pp. 3412-3414. https://doi.org/10.1063/1.1476702

    Mapping strain fields in ultrathin bonded Si wafers by x-ray scattering. / Nielsen, Mourits; Poulsen, Mette; Bunk, Oliver; Kumpf, Christian; Feidenhans'l, Robert Krarup; Johnson, R.L.; Jensen, Flemming; Grey, Francois.

    In: Applied Physics Letters, Vol. 80, No. 18, 2002, p. 3412-3414.

    Research output: Contribution to journalJournal articleResearchpeer-review

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    AU - Nielsen, Mourits

    AU - Poulsen, Mette

    AU - Bunk, Oliver

    AU - Kumpf, Christian

    AU - Feidenhans'l, Robert Krarup

    AU - Johnson, R.L.

    AU - Jensen, Flemming

    AU - Grey, Francois

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    AB - X-ray scattering reveals the atomic displacements arising from rotational misalignment in ultrathin silicon bonded wafers. For a 4.3 nm top wafer, the strain field penetrates from the bonded interface to the surface and produces distinctive finite-size oscillations in x-ray data. Analytical calculations permit the atomic displacements throughout the thin top wafer to be modeled.

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    KW - SILICON-WAFERS

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    Nielsen M, Poulsen M, Bunk O, Kumpf C, Feidenhans'l RK, Johnson RL et al. Mapping strain fields in ultrathin bonded Si wafers by x-ray scattering. Applied Physics Letters. 2002;80(18):3412-3414. https://doi.org/10.1063/1.1476702