Mapping strain  fields in ultrathin bonded Si wafers by x-ray scattering

Mourits Nielsen; Mette Poulsen; Oliver Bunk; Christian Kumpf; Robert Krarup Feidenhans'l; R.L. Johnson; Flemming Jensen; Francois Grey

doi:10.1063/1.1476702

Mapping strain fields in ultrathin bonded Si wafers by x-ray scattering

Mourits Nielsen, Mette Poulsen, Oliver Bunk, Christian Kumpf, Robert Krarup Feidenhans'l, R.L. Johnson, Flemming Jensen, Francois Grey

University of Hamburg

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Abstract

X-ray scattering reveals the atomic displacements arising from rotational misalignment in ultrathin silicon bonded wafers. For a 4.3 nm top wafer, the strain field penetrates from the bonded interface to the surface and produces distinctive finite-size oscillations in x-ray data. Analytical calculations permit the atomic displacements throughout the thin top wafer to be modeled.

Original language	English
Journal	Applied Physics Letters
Volume	80
Issue number	18
Pages (from-to)	3412-3414
ISSN	0003-6951
DOIs	https://doi.org/10.1063/1.1476702
Publication status	Published - 2002

Bibliographical note

Copyright (2002) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

Keywords

DIFFRACTION
SILICON-WAFERS

Access to Document

10.1063/1.1476702

GreyFinal published version, 55 KB

http://apl.aip.org/applab/v80/i18/p3412_s1

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Cite this

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AU - Feidenhans'l, Robert Krarup

AU - Johnson, R.L.

AU - Jensen, Flemming

AU - Grey, Francois

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AB - X-ray scattering reveals the atomic displacements arising from rotational misalignment in ultrathin silicon bonded wafers. For a 4.3 nm top wafer, the strain field penetrates from the bonded interface to the surface and produces distinctive finite-size oscillations in x-ray data. Analytical calculations permit the atomic displacements throughout the thin top wafer to be modeled.

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