Mapping strain fields in ultrathin bonded Si wafers by x-ray scattering

Mourits Nielsen, Mette Poulsen, Oliver Bunk, Christian Kumpf, Robert Krarup Feidenhans'l, R.L. Johnson, Flemming Jensen, Francois Grey

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    Abstract

    X-ray scattering reveals the atomic displacements arising from rotational misalignment in ultrathin silicon bonded wafers. For a 4.3 nm top wafer, the strain field penetrates from the bonded interface to the surface and produces distinctive finite-size oscillations in x-ray data. Analytical calculations permit the atomic displacements throughout the thin top wafer to be modeled.
    Original languageEnglish
    JournalApplied Physics Letters
    Volume80
    Issue number18
    Pages (from-to)3412-3414
    ISSN0003-6951
    DOIs
    Publication statusPublished - 2002

    Bibliographical note

    Copyright (2002) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

    Keywords

    • DIFFRACTION
    • SILICON-WAFERS

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