Mapping boron in silicon solar cells using electron energy-loss spectroscopy

Martial Duchamp; Chris Boothroyd; András Kovács; Shima Kadkhodazadeh; Takeshi Kasama; M. S. Moreno; B. B. Van Aken; J. -P. Barnes; M. Veillerot; S. B. Newcomb; Rafal E. Dunin-Borkowski

doi:10.1088/1742-6596/326/1/012052

Mapping boron in silicon solar cells using electron energy-loss spectroscopy

Martial Duchamp, Chris Boothroyd, András Kovács, Shima Kadkhodazadeh, Takeshi Kasama, M. S. Moreno, B. B. Van Aken, J. -P. Barnes, M. Veillerot, S. B. Newcomb, Rafal E. Dunin-Borkowski

Research output: Contribution to journal › Conference article › Research › peer-review

Abstract

Electron energy-loss spectroscopy (EELS) is used to study the B distribution in a p-i-n layered solar cell structure. The boron concentration in the p-doped Si layer is expected to be ~1021 cm−3 and should not exceed 1017 cm−3 in the neighbouring intrinsic layer. We show that B concentrations as low as 3×l020 cm−3 (0.6 at. %) can be measured using EELS. Our measurements are in close agreement with real space ab-initio multiple scattering calculations and secondary ion mass spectrometry measurements.

Original language	English
Book series	Journal of Physics: Conference Series
Volume	326
Issue number	1
Pages (from-to)	012052
ISSN	1742-6588
DOIs	https://doi.org/10.1088/1742-6596/326/1/012052
Publication status	Published - 2011
Event	17th International Conference on Microscopy of Semiconducting Materials - University of Cambridge, Cambridge, United Kingdom Duration: 4 Apr 2011 → 7 Apr 2011 Conference number: 17

Conference

Conference	17th International Conference on Microscopy of Semiconducting Materials
Number	17
Location	University of Cambridge
Country/Territory	United Kingdom
City	Cambridge
Period	04/04/2011 → 07/04/2011

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@inproceedings{f58c345c2faf4cfc9f6bb6cfd74bd47c,

title = "Mapping boron in silicon solar cells using electron energy-loss spectroscopy",

abstract = "Electron energy-loss spectroscopy (EELS) is used to study the B distribution in a p-i-n layered solar cell structure. The boron concentration in the p-doped Si layer is expected to be ~1021 cm−3 and should not exceed 1017 cm−3 in the neighbouring intrinsic layer. We show that B concentrations as low as 3×l020 cm−3 (0.6 at. %) can be measured using EELS. Our measurements are in close agreement with real space ab-initio multiple scattering calculations and secondary ion mass spectrometry measurements.",

author = "Martial Duchamp and Chris Boothroyd and Andr{\'a}s Kov{\'a}cs and Shima Kadkhodazadeh and Takeshi Kasama and Moreno, {M. S.} and Aken, {B. B. Van} and Barnes, {J. -P.} and M. Veillerot and Newcomb, {S. B.} and Dunin-Borkowski, {Rafal E.}",

year = "2011",

doi = "10.1088/1742-6596/326/1/012052",

language = "English",

volume = "326",

pages = "012052",

journal = "Journal of Physics: Conference Series",

issn = "1742-6588",

publisher = "IOP Publishing",

number = "1",

note = "17th International Conference on Microscopy of Semiconducting Materials ; Conference date: 04-04-2011 Through 07-04-2011",

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TY - GEN

T1 - Mapping boron in silicon solar cells using electron energy-loss spectroscopy

AU - Duchamp, Martial

AU - Boothroyd, Chris

AU - Kovács, András

AU - Kadkhodazadeh, Shima

AU - Kasama, Takeshi

AU - Moreno, M. S.

AU - Aken, B. B. Van

AU - Barnes, J. -P.

AU - Veillerot, M.

AU - Newcomb, S. B.

AU - Dunin-Borkowski, Rafal E.

N1 - Conference code: 17

PY - 2011

Y1 - 2011

N2 - Electron energy-loss spectroscopy (EELS) is used to study the B distribution in a p-i-n layered solar cell structure. The boron concentration in the p-doped Si layer is expected to be ~1021 cm−3 and should not exceed 1017 cm−3 in the neighbouring intrinsic layer. We show that B concentrations as low as 3×l020 cm−3 (0.6 at. %) can be measured using EELS. Our measurements are in close agreement with real space ab-initio multiple scattering calculations and secondary ion mass spectrometry measurements.

AB - Electron energy-loss spectroscopy (EELS) is used to study the B distribution in a p-i-n layered solar cell structure. The boron concentration in the p-doped Si layer is expected to be ~1021 cm−3 and should not exceed 1017 cm−3 in the neighbouring intrinsic layer. We show that B concentrations as low as 3×l020 cm−3 (0.6 at. %) can be measured using EELS. Our measurements are in close agreement with real space ab-initio multiple scattering calculations and secondary ion mass spectrometry measurements.

U2 - 10.1088/1742-6596/326/1/012052

DO - 10.1088/1742-6596/326/1/012052

M3 - Conference article

SN - 1742-6588

VL - 326

SP - 012052

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

IS - 1

T2 - 17th International Conference on Microscopy of Semiconducting Materials

Y2 - 4 April 2011 through 7 April 2011

ER -

Mapping boron in silicon solar cells using electron energy-loss spectroscopy

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