Magnetron sputtering system stabilisation for high rate
                desposition of AlN films

A Fomin; Vladislav Akhmatov; S Selishchev

Magnetron sputtering system stabilisation for high rate desposition of AlN films

A Fomin, Vladislav Akhmatov, S Selishchev

Moscow Electronic Engineering Institut

Research output: Contribution to journal › Journal article › Research › peer-review

Abstract

The stabilisation of a planar magnetron sputtering system for reactive sputtering of AlN in a gaseous mixture of Ar and highly active NH3 was examined. The helical instability in the cathode plasma sheath was observed and methods for its damping were proposed. It was found that the deposition of c-axis oriented AlN films at high deposition rates in the range 0.5-3.0 m/h is possible, when the helical instability in the magentron system is damped.

Original language	English
Journal	Vacuum
Volume	49
Issue number	March
Pages (from-to)	247-251
Publication status	Published - 1998

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title = "Magnetron sputtering system stabilisation for high rate desposition of AlN films",

abstract = "The stabilisation of a planar magnetron sputtering system for reactive sputtering of AlN in a gaseous mixture of Ar and highly active NH3 was examined. The helical instability in the cathode plasma sheath was observed and methods for its damping were proposed. It was found that the deposition of c-axis oriented AlN films at high deposition rates in the range 0.5-3.0 m/h is possible, when the helical instability in the magentron system is damped.",

author = "A Fomin and Vladislav Akhmatov and S Selishchev",

year = "1998",

language = "English",

volume = "49",

pages = "247--251",

journal = "Vacuum",

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number = "March",

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T1 - Magnetron sputtering system stabilisation for high rate desposition of AlN films

AU - Fomin, A

AU - Akhmatov, Vladislav

AU - Selishchev, S

PY - 1998

Y1 - 1998

N2 - The stabilisation of a planar magnetron sputtering system for reactive sputtering of AlN in a gaseous mixture of Ar and highly active NH3 was examined. The helical instability in the cathode plasma sheath was observed and methods for its damping were proposed. It was found that the deposition of c-axis oriented AlN films at high deposition rates in the range 0.5-3.0 m/h is possible, when the helical instability in the magentron system is damped.

AB - The stabilisation of a planar magnetron sputtering system for reactive sputtering of AlN in a gaseous mixture of Ar and highly active NH3 was examined. The helical instability in the cathode plasma sheath was observed and methods for its damping were proposed. It was found that the deposition of c-axis oriented AlN films at high deposition rates in the range 0.5-3.0 m/h is possible, when the helical instability in the magentron system is damped.

M3 - Journal article

VL - 49

SP - 247

EP - 251

JO - Vacuum

JF - Vacuum

SN - 0042-207X

IS - March

ER -