Abstract
The stabilisation of a planar magnetron sputtering system for
reactive sputtering of AlN in a gaseous mixture of Ar and highly
active NH3 was examined. The helical instability in the cathode
plasma sheath was observed and methods for its damping were
proposed. It was found that the deposition of c-axis oriented AlN
films at high deposition rates in the range 0.5-3.0 m/h is
possible, when the helical instability in the magentron system is
damped.
Original language | English |
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Journal | Vacuum |
Volume | 49 |
Issue number | March |
Pages (from-to) | 247-251 |
Publication status | Published - 1998 |