Magnetron sputtering system stabilisation for high rate desposition of AlN films

A Fomin, Vladislav Akhmatov, S Selishchev

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    Abstract

    The stabilisation of a planar magnetron sputtering system for reactive sputtering of AlN in a gaseous mixture of Ar and highly active NH3 was examined. The helical instability in the cathode plasma sheath was observed and methods for its damping were proposed. It was found that the deposition of c-axis oriented AlN films at high deposition rates in the range 0.5-3.0 m/h is possible, when the helical instability in the magentron system is damped.
    Original languageEnglish
    JournalVacuum
    Volume49
    Issue numberMarch
    Pages (from-to)247-251
    Publication statusPublished - 1998

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