Luminescence enhancement of near ultraviolet light-emitting diodes

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedings – Annual report year: 2017Researchpeer-review

Standard

Luminescence enhancement of near ultraviolet light-emitting diodes. / Lin, Li; Jensen, Flemming; Herstrøm, Berit; Ou, Haiyan.

Proceedings of Asia Communications and Photonics Conference 2016. Optical Society of America, 2016. AS1F.4 (OSA Technical Digest).

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedings – Annual report year: 2017Researchpeer-review

Harvard

Lin, L, Jensen, F, Herstrøm, B & Ou, H 2016, Luminescence enhancement of near ultraviolet light-emitting diodes. in Proceedings of Asia Communications and Photonics Conference 2016., AS1F.4, Optical Society of America, OSA Technical Digest, Asia Communications and Photonics Conference 2016, Wuhan, China, 02/11/2016. https://doi.org/10.1364/ACPC.2016.AS1F.4

APA

Lin, L., Jensen, F., Herstrøm, B., & Ou, H. (2016). Luminescence enhancement of near ultraviolet light-emitting diodes. In Proceedings of Asia Communications and Photonics Conference 2016 [AS1F.4] Optical Society of America. OSA Technical Digest https://doi.org/10.1364/ACPC.2016.AS1F.4

CBE

Lin L, Jensen F, Herstrøm B, Ou H. 2016. Luminescence enhancement of near ultraviolet light-emitting diodes. In Proceedings of Asia Communications and Photonics Conference 2016. Optical Society of America. (OSA Technical Digest). https://doi.org/10.1364/ACPC.2016.AS1F.4

MLA

Lin, Li et al. "Luminescence enhancement of near ultraviolet light-emitting diodes". Proceedings of Asia Communications and Photonics Conference 2016. Optical Society of America. (OSA Technical Digest). 2016. https://doi.org/10.1364/ACPC.2016.AS1F.4

Vancouver

Lin L, Jensen F, Herstrøm B, Ou H. Luminescence enhancement of near ultraviolet light-emitting diodes. In Proceedings of Asia Communications and Photonics Conference 2016. Optical Society of America. 2016. AS1F.4. (OSA Technical Digest). https://doi.org/10.1364/ACPC.2016.AS1F.4

Author

Lin, Li ; Jensen, Flemming ; Herstrøm, Berit ; Ou, Haiyan. / Luminescence enhancement of near ultraviolet light-emitting diodes. Proceedings of Asia Communications and Photonics Conference 2016. Optical Society of America, 2016. (OSA Technical Digest).

Bibtex

@inproceedings{37f56dfa1eec49b49383ae41711e8628,
title = "Luminescence enhancement of near ultraviolet light-emitting diodes",
abstract = "Nanopillars were applied on the p-GaN layer of the InGaN-based near ultraviolet epiwafer to improve the light extraction efficiency. A photoluminescence enhancement of 74 {\%} is reported with a nanopillar height of around 105 nm.",
author = "Li Lin and Flemming Jensen and Berit Herstr{\o}m and Haiyan Ou",
year = "2016",
doi = "10.1364/ACPC.2016.AS1F.4",
language = "English",
booktitle = "Proceedings of Asia Communications and Photonics Conference 2016",
publisher = "Optical Society of America",

}

RIS

TY - GEN

T1 - Luminescence enhancement of near ultraviolet light-emitting diodes

AU - Lin, Li

AU - Jensen, Flemming

AU - Herstrøm, Berit

AU - Ou, Haiyan

PY - 2016

Y1 - 2016

N2 - Nanopillars were applied on the p-GaN layer of the InGaN-based near ultraviolet epiwafer to improve the light extraction efficiency. A photoluminescence enhancement of 74 % is reported with a nanopillar height of around 105 nm.

AB - Nanopillars were applied on the p-GaN layer of the InGaN-based near ultraviolet epiwafer to improve the light extraction efficiency. A photoluminescence enhancement of 74 % is reported with a nanopillar height of around 105 nm.

U2 - 10.1364/ACPC.2016.AS1F.4

DO - 10.1364/ACPC.2016.AS1F.4

M3 - Article in proceedings

BT - Proceedings of Asia Communications and Photonics Conference 2016

PB - Optical Society of America

ER -