Luminescence enhancement of near ultraviolet light-emitting diodes

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Nanopillars were applied on the p-GaN layer of the InGaN-based near ultraviolet epiwafer to improve the light extraction efficiency. A photoluminescence enhancement of 74 % is reported with a nanopillar height of around 105 nm.
Original languageEnglish
Title of host publicationProceedings of Asia Communications and Photonics Conference 2016
Number of pages3
PublisherOptical Society of America
Publication date2016
Article numberAS1F.4
ISBN (Electronic)978-0-9600380-0-8
Publication statusPublished - 2016
EventAsia Communications and Photonics Conference 2016 - Wuhan, China
Duration: 2 Nov 20165 Nov 2016


ConferenceAsia Communications and Photonics Conference 2016
SeriesOSA Technical Digest
CitationsWeb of Science® Times Cited: No match on DOI

ID: 128475560