Luminescence enhancement of near ultraviolet light-emitting diodes

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedings – Annual report year: 2017Researchpeer-review

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Nanopillars were applied on the p-GaN layer of the InGaN-based near ultraviolet epiwafer to improve the light extraction efficiency. A photoluminescence enhancement of 74 % is reported with a nanopillar height of around 105 nm.
Original languageEnglish
Title of host publicationProceedings of Asia Communications and Photonics Conference 2016
Number of pages3
PublisherOptical Society of America
Publication date2016
Article numberAS1F.4
ISBN (Electronic)978-0-9600380-0-8
DOIs
Publication statusPublished - 2016
EventAsia Communications and Photonics Conference 2016 - Wuhan, China
Duration: 2 Nov 20165 Nov 2016

Conference

ConferenceAsia Communications and Photonics Conference 2016
CountryChina
CityWuhan
Period02/11/201605/11/2016
SeriesOSA Technical Digest
CitationsWeb of Science® Times Cited: No match on DOI

ID: 128475560