@inproceedings{37f56dfa1eec49b49383ae41711e8628,
title = "Luminescence enhancement of near ultraviolet light-emitting diodes",
abstract = "Nanopillars were applied on the p-GaN layer of the InGaN-based near ultraviolet epiwafer to improve the light extraction efficiency. A photoluminescence enhancement of 74 \% is reported with a nanopillar height of around 105 nm.",
author = "Li Lin and Flemming Jensen and Berit Herstr{\o}m and Haiyan Ou",
year = "2016",
doi = "10.1364/ACPC.2016.AS1F.4",
language = "English",
series = "OSA Technical Digest",
publisher = "Optical Society of America",
booktitle = "Proceedings of Asia Communications and Photonics Conference 2016",
note = "Asia Communications and Photonics Conference 2016, ACP 2016 ; Conference date: 02-11-2016 Through 05-11-2016",
}