Luminescence dynamics in type-II GaAs/AlAs superlattices near the type-I to type-II crossover

Wolfgang Werner Langbein, H. Kalt, Jørn Märcher Hvam

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    Abstract

    We report on a study of the time-resolved luminescence of type-II GaAs/AlAs superlattices near the type-I to type-II crossover. In spite of the slight type-II band alignment, the luminescence is dominated by the type-I transition. This is due to the inhomogeneous broadening of the type-I transition and the weak type-II oscillator strength, leading to a dominant luminescence of deeply localized type-I states. The relaxation within these localized states is found to be in agreement with a hopping model. At higher temperatures and excitation densities, the AlAs X minima act as an electron reservoir, leading to a strong increase of the luminescence decay time.
    Original languageEnglish
    JournalPhysical Review B
    Volume54
    Issue number20
    Pages (from-to)14589-14594
    ISSN2469-9950
    DOIs
    Publication statusPublished - 1996

    Bibliographical note

    Copyright (1996) American Physical Society.

    Keywords

    • RELAXATION
    • STATES
    • TRANSPORT
    • PHOTOLUMINESCENCE
    • SPECTRA
    • INTERFACES
    • LOCALIZED EXCITONS
    • SHORT-PERIOD SUPERLATTICES
    • DECAY
    • CDTE/ZNTE QUANTUM-WELLS

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