Low Voltage, High-Q SOI MEMS Varactors for RF Applications

Arda Deniz Yalcinkaya; Søren Jensen; Ole Hansen

doi:10.1109/ESSCIRC.2003.1257208

Low Voltage, High-Q SOI MEMS Varactors for RF Applications

Arda Deniz Yalcinkaya, Søren Jensen, Ole Hansen

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

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Abstract

A micro electromechanical tunable capacitor with a low control voltage, a wide tuning range and high electrical quality factor is presented with detailed characterizations. A 50μm thick single-crystalline silicon layer was etched using deep reactive ion etching (DRIE) for obtaining high-aspect ratio (>20) parallel comb-drive structures with vertical sidewalls. Consisting of only one lithographic mask step, the process sequence can be completed in a short time. Having 1 pF of nominal capacitance, the device offers an electrical quality factor of 100 at 100MHz and a self resonance at 4.08 GHz, enabling the usage as a passive component in the RF band. The mechanical settling time of the varactor is measured to be 200 μs in ambient air. For control voltages ranging from 1.5V to 5V, tuning ratios of 2:1, 1.7:1 and 1.5:1 are obtained from different capacitor designs. It was found that the device is a suitable passive component to be used in band-pass filtering, voltage controlled oscillator or impedance matching applications on the very high frequency(VHF) and ultra high frequency (UHF) bands.

Original language	English
Title of host publication	Proceedings of the 29th EuropeanSolid-State Circuits Conference (ESSCIRC)
Publisher	IEEE
Publication date	2003
ISBN (Print)	0-7803-7995-0
DOIs	https://doi.org/10.1109/ESSCIRC.2003.1257208
Publication status	Published - 2003
Event	29th European Solid-State Circuits Conference - Estoril, Portugal Duration: 16 Sept 2003 → 18 Sept 2003 Conference number: 29 https://ieeexplore.ieee.org/xpl/conhome/8892/proceeding

Conference

Conference	29th European Solid-State Circuits Conference
Number	29
Country/Territory	Portugal
City	Estoril
Period	16/09/2003 → 18/09/2003
Internet address	https://ieeexplore.ieee.org/xpl/conhome/8892/proceeding

Bibliographical note

Copyright: 2003 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE

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title = "Low Voltage, High-Q SOI MEMS Varactors for RF Applications",

abstract = "A micro electromechanical tunable capacitor with a low control voltage, a wide tuning range and high electrical quality factor is presented with detailed characterizations. A 50μm thick single-crystalline silicon layer was etched using deep reactive ion etching (DRIE) for obtaining high-aspect ratio (>20) parallel comb-drive structures with vertical sidewalls. Consisting of only one lithographic mask step, the process sequence can be completed in a short time. Having 1 pF of nominal capacitance, the device offers an electrical quality factor of 100 at 100MHz and a self resonance at 4.08 GHz, enabling the usage as a passive component in the RF band. The mechanical settling time of the varactor is measured to be 200 μs in ambient air. For control voltages ranging from 1.5V to 5V, tuning ratios of 2:1, 1.7:1 and 1.5:1 are obtained from different capacitor designs. It was found that the device is a suitable passive component to be used in band-pass filtering, voltage controlled oscillator or impedance matching applications on the very high frequency(VHF) and ultra high frequency (UHF) bands.",

author = "Yalcinkaya, {Arda Deniz} and S{\o}ren Jensen and Ole Hansen",

note = "Copyright: 2003 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE; 29th European Solid-State Circuits Conference, ESSCIRC 2003 ; Conference date: 16-09-2003 Through 18-09-2003",

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N2 - A micro electromechanical tunable capacitor with a low control voltage, a wide tuning range and high electrical quality factor is presented with detailed characterizations. A 50μm thick single-crystalline silicon layer was etched using deep reactive ion etching (DRIE) for obtaining high-aspect ratio (>20) parallel comb-drive structures with vertical sidewalls. Consisting of only one lithographic mask step, the process sequence can be completed in a short time. Having 1 pF of nominal capacitance, the device offers an electrical quality factor of 100 at 100MHz and a self resonance at 4.08 GHz, enabling the usage as a passive component in the RF band. The mechanical settling time of the varactor is measured to be 200 μs in ambient air. For control voltages ranging from 1.5V to 5V, tuning ratios of 2:1, 1.7:1 and 1.5:1 are obtained from different capacitor designs. It was found that the device is a suitable passive component to be used in band-pass filtering, voltage controlled oscillator or impedance matching applications on the very high frequency(VHF) and ultra high frequency (UHF) bands.

AB - A micro electromechanical tunable capacitor with a low control voltage, a wide tuning range and high electrical quality factor is presented with detailed characterizations. A 50μm thick single-crystalline silicon layer was etched using deep reactive ion etching (DRIE) for obtaining high-aspect ratio (>20) parallel comb-drive structures with vertical sidewalls. Consisting of only one lithographic mask step, the process sequence can be completed in a short time. Having 1 pF of nominal capacitance, the device offers an electrical quality factor of 100 at 100MHz and a self resonance at 4.08 GHz, enabling the usage as a passive component in the RF band. The mechanical settling time of the varactor is measured to be 200 μs in ambient air. For control voltages ranging from 1.5V to 5V, tuning ratios of 2:1, 1.7:1 and 1.5:1 are obtained from different capacitor designs. It was found that the device is a suitable passive component to be used in band-pass filtering, voltage controlled oscillator or impedance matching applications on the very high frequency(VHF) and ultra high frequency (UHF) bands.

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BT - Proceedings of the 29th EuropeanSolid-State Circuits Conference (ESSCIRC)

PB - IEEE

T2 - 29th European Solid-State Circuits Conference

Y2 - 16 September 2003 through 18 September 2003

ER -

Low Voltage, High-Q SOI MEMS Varactors for RF Applications

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Conference

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