Abstract
The synthesis of highly aligned and ordered wurtzite ZnS single-crystal nanowires at low temperatures is crucial for their applications in electronic and optoelectronic nanodevices. In the present study, wurtzite ZnS single-crystal nanowire arrays with a preferred growth along the [110] direction have been successfully prepared at a low temperature of T = 120°C by employing electrochemical deposition techniques using the alumina template with 40 nm diameter pores. The microstructure of the ZnS nanowires was characterized by x-ray diffraction and transmission electron microscopy studies. A small deposition current is found to be favourable for the growth of wurtzite ZnS single-crystal nanowires and the cause has been discussed. © IOP Publishing Ltd.
Original language | English |
---|---|
Article number | 115604 |
Journal | Nanotechnology |
Volume | 18 |
Issue number | 11 |
Number of pages | 4 |
ISSN | 0957-4484 |
DOIs | |
Publication status | Published - 2007 |
Externally published | Yes |