Low Temperature Photoluminescence of 6H fluorescent SiC

Research output: Contribution to conferenceConference abstract for conference – Annual report year: 2017Researchpeer-review

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Low Temperature Photoluminescence of 6H fluorescent SiC. / Wei, Yi; Künecke, Ulrike; Jokubavicius, Valdas; Syväjärvi, Mikael; Wellmann, Peter; Ou, Haiyan.

2017. Abstract from E-MRS Spring Meeting 2017, Stasbourg, France.

Research output: Contribution to conferenceConference abstract for conference – Annual report year: 2017Researchpeer-review

Harvard

Wei, Y, Künecke, U, Jokubavicius, V, Syväjärvi, M, Wellmann, P & Ou, H 2017, 'Low Temperature Photoluminescence of 6H fluorescent SiC' E-MRS Spring Meeting 2017, Stasbourg, France, 22/05/2017 - 26/05/2017, .

APA

Wei, Y., Künecke, U., Jokubavicius, V., Syväjärvi, M., Wellmann, P., & Ou, H. (2017). Low Temperature Photoluminescence of 6H fluorescent SiC. Abstract from E-MRS Spring Meeting 2017, Stasbourg, France.

CBE

Wei Y, Künecke U, Jokubavicius V, Syväjärvi M, Wellmann P, Ou H. 2017. Low Temperature Photoluminescence of 6H fluorescent SiC. Abstract from E-MRS Spring Meeting 2017, Stasbourg, France.

MLA

Vancouver

Wei Y, Künecke U, Jokubavicius V, Syväjärvi M, Wellmann P, Ou H. Low Temperature Photoluminescence of 6H fluorescent SiC. 2017. Abstract from E-MRS Spring Meeting 2017, Stasbourg, France.

Author

Wei, Yi ; Künecke, Ulrike ; Jokubavicius, Valdas ; Syväjärvi, Mikael ; Wellmann, Peter ; Ou, Haiyan. / Low Temperature Photoluminescence of 6H fluorescent SiC. Abstract from E-MRS Spring Meeting 2017, Stasbourg, France.1 p.

Bibtex

@conference{3fc2253a904e438abfa2d33cfef9ac0c,
title = "Low Temperature Photoluminescence of 6H fluorescent SiC",
abstract = "We have presented the low temperature photoluminescence (PL) measurements of three 6H fluorescent Silicon Carbide (f-SiC) samples. The epilayers of the f-SiC samples were nitrogenboron co-doped and grown by fast sublimation growth process (FSGP) method on the bulk 6H SiC substrates. The doping concentrations of the f-SiC epilayers were determined by secondary ion mass spectroscopy (SIMS) showing strong n-type, strong p-type and slight p-type extrinsic semiconductor doping of each epilayer. The PL intensity of one commercial 6H bulk SiC (TanKeBlue Ltd.) was also measured and applied as the reference. The PL was excited by a diode laser source with wavelength of 405 nm and power of 5 mW. The temperature of the PLmeasurement was ranged from 25K to 300K when the liquid nitrogen cryostat was used, while lower temperature from 5K was achieved when the cryostat with liquid helium was applied. The anomalous temperature dependences of the PL intensity spectrum of f-SiC samples were found. The PL peak energy’s S-shape dependence on the temperature was observed which was caused by nitrogen induced localization effect. For strong p-type f-SiC, one more PL intensity peak at 5 k wasobserved at wavelength of 520 nm, where this extra PL peak was the result of basal plane dislocation and free-to-acceptor recombination.",
author = "Yi Wei and Ulrike K{\"u}necke and Valdas Jokubavicius and Mikael Syv{\"a}j{\"a}rvi and Peter Wellmann and Haiyan Ou",
year = "2017",
language = "English",
note = "E-MRS Spring Meeting 2017 ; Conference date: 22-05-2017 Through 26-05-2017",
url = "http://www.european-mrs.com/meetings/2017-spring-meeting",

}

RIS

TY - ABST

T1 - Low Temperature Photoluminescence of 6H fluorescent SiC

AU - Wei, Yi

AU - Künecke, Ulrike

AU - Jokubavicius, Valdas

AU - Syväjärvi, Mikael

AU - Wellmann, Peter

AU - Ou, Haiyan

PY - 2017

Y1 - 2017

N2 - We have presented the low temperature photoluminescence (PL) measurements of three 6H fluorescent Silicon Carbide (f-SiC) samples. The epilayers of the f-SiC samples were nitrogenboron co-doped and grown by fast sublimation growth process (FSGP) method on the bulk 6H SiC substrates. The doping concentrations of the f-SiC epilayers were determined by secondary ion mass spectroscopy (SIMS) showing strong n-type, strong p-type and slight p-type extrinsic semiconductor doping of each epilayer. The PL intensity of one commercial 6H bulk SiC (TanKeBlue Ltd.) was also measured and applied as the reference. The PL was excited by a diode laser source with wavelength of 405 nm and power of 5 mW. The temperature of the PLmeasurement was ranged from 25K to 300K when the liquid nitrogen cryostat was used, while lower temperature from 5K was achieved when the cryostat with liquid helium was applied. The anomalous temperature dependences of the PL intensity spectrum of f-SiC samples were found. The PL peak energy’s S-shape dependence on the temperature was observed which was caused by nitrogen induced localization effect. For strong p-type f-SiC, one more PL intensity peak at 5 k wasobserved at wavelength of 520 nm, where this extra PL peak was the result of basal plane dislocation and free-to-acceptor recombination.

AB - We have presented the low temperature photoluminescence (PL) measurements of three 6H fluorescent Silicon Carbide (f-SiC) samples. The epilayers of the f-SiC samples were nitrogenboron co-doped and grown by fast sublimation growth process (FSGP) method on the bulk 6H SiC substrates. The doping concentrations of the f-SiC epilayers were determined by secondary ion mass spectroscopy (SIMS) showing strong n-type, strong p-type and slight p-type extrinsic semiconductor doping of each epilayer. The PL intensity of one commercial 6H bulk SiC (TanKeBlue Ltd.) was also measured and applied as the reference. The PL was excited by a diode laser source with wavelength of 405 nm and power of 5 mW. The temperature of the PLmeasurement was ranged from 25K to 300K when the liquid nitrogen cryostat was used, while lower temperature from 5K was achieved when the cryostat with liquid helium was applied. The anomalous temperature dependences of the PL intensity spectrum of f-SiC samples were found. The PL peak energy’s S-shape dependence on the temperature was observed which was caused by nitrogen induced localization effect. For strong p-type f-SiC, one more PL intensity peak at 5 k wasobserved at wavelength of 520 nm, where this extra PL peak was the result of basal plane dislocation and free-to-acceptor recombination.

M3 - Conference abstract for conference

ER -