Abstract
group density and well-controlled films makes atomic layer deposited Al2O3 an excellent choice for the intermediate layer. The authors have optimized the bonding process to achieve a high interface energy of 1.7 J/m2 for a low temperature annealing of 300 °C. The authors also demonstrate wafer bonding of InP to SiO2 on Si and GaAs to sapphire using the Al2O3 interlayer. Published by the AVS.
| Original language | English |
|---|---|
| Article number | 011202 |
| Journal | Journal of Vacuum Science and Technology. Part B. Microelectronics and Nanometer Structures |
| Volume | 36 |
| Issue number | 1 |
| Number of pages | 6 |
| ISSN | 1071-1023 |
| DOIs | |
| Publication status | Published - 2018 |
Keywords
- Heterogeneous materials
- Direct bonding
- Al2O3
- Low temperature
- Silicon photonics
- Laser
Cite this
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Low temperature bonding of heterogeneous materials using Al2O3 as an intermediate layer. / Sahoo, Hitesh Kumar; Ottaviano, Luisa; Zheng, Yi; Hansen, Ole; Yvind, Kresten.
In: Journal of Vacuum Science and Technology. Part B. Microelectronics and Nanometer Structures, Vol. 36, No. 1, 011202, 2018.Research output: Contribution to journal › Journal article › Research › peer-review
TY - JOUR
T1 - Low temperature bonding of heterogeneous materials using Al2O3 as an intermediate layer
AU - Sahoo, Hitesh Kumar
AU - Ottaviano, Luisa
AU - Zheng, Yi
AU - Hansen, Ole
AU - Yvind, Kresten
PY - 2018
Y1 - 2018
N2 - Integration of heterogeneous materials is crucial for many nanophotonic devices. The integration is often achieved by bonding using polymer adhesives or metals. A much better and cleaner option is direct wafer bonding, but the high annealing temperatures required make it a much less attractive option. Direct wafer bonding relies on a high density of hydroxyl groups on the surfaces, which may be difficult to achieve depending on the materials. Thus, it is a challenge to design a universal wafer bonding process. However, using an intermediate layer between the bonding surfaces reduces the dependence on the bonding materials, and thus, the bonding mechanism essentially remains the same. The authors present a systematic study on the use of Al2O3 as an intermediate layer for bonding of heterogeneous materials. The ability to achieve high hydroxylgroup density and well-controlled films makes atomic layer deposited Al2O3 an excellent choice for the intermediate layer. The authors have optimized the bonding process to achieve a high interface energy of 1.7 J/m2 for a low temperature annealing of 300 °C. The authors also demonstrate wafer bonding of InP to SiO2 on Si and GaAs to sapphire using the Al2O3 interlayer. Published by the AVS.
AB - Integration of heterogeneous materials is crucial for many nanophotonic devices. The integration is often achieved by bonding using polymer adhesives or metals. A much better and cleaner option is direct wafer bonding, but the high annealing temperatures required make it a much less attractive option. Direct wafer bonding relies on a high density of hydroxyl groups on the surfaces, which may be difficult to achieve depending on the materials. Thus, it is a challenge to design a universal wafer bonding process. However, using an intermediate layer between the bonding surfaces reduces the dependence on the bonding materials, and thus, the bonding mechanism essentially remains the same. The authors present a systematic study on the use of Al2O3 as an intermediate layer for bonding of heterogeneous materials. The ability to achieve high hydroxylgroup density and well-controlled films makes atomic layer deposited Al2O3 an excellent choice for the intermediate layer. The authors have optimized the bonding process to achieve a high interface energy of 1.7 J/m2 for a low temperature annealing of 300 °C. The authors also demonstrate wafer bonding of InP to SiO2 on Si and GaAs to sapphire using the Al2O3 interlayer. Published by the AVS.
KW - Heterogeneous materials
KW - Direct bonding
KW - Al2O3
KW - Low temperature
KW - Silicon photonics
KW - Laser
U2 - 10.1116/1.5005591
DO - 10.1116/1.5005591
M3 - Journal article
VL - 36
JO - Journal of Vacuum Science and Technology. Part B. Microelectronics and Nanometer Structures
JF - Journal of Vacuum Science and Technology. Part B. Microelectronics and Nanometer Structures
SN - 1071-1023
IS - 1
M1 - 011202
ER -