Low temperature anodic bonding to silicon nitride

Steen Weichel; Roger De Reus; Salim Bouaidat; Peter Rasmussen; Ole Hansen; Karen Birkelund; Paul Andreas Holger Dirac

doi:10.1016/S0924-4247(99)00372-6

Low temperature anodic bonding to silicon nitride

Steen Weichel, Roger De Reus, Salim Bouaidat, Peter Rasmussen, Ole Hansen, Karen Birkelund, Paul Andreas Holger Dirac

Research output: Contribution to journal › Journal article › Research › peer-review

Abstract

Low-temperature anodic bonding to stoichiometric silicon nitride surfaces has been performed in the temperature range from 3508C to 4008C. It is shown that the bonding is improved considerably if the nitride surfaces are either oxidized or exposed to an oxygen plasma prior to the bonding. Both bulk and thin-film glasses were used in the bonding experiments. Bond quality was evaluated using a tensile test on structured dies. The effect of oxygen-based pre-treatments of the nitride surface on the bond quality has been evaluated. Bond strengths up to 35 Nrmm2 and yields up to 100% were obtained.

Original language	English
Journal	Sensors and Actuators A: Physical
Volume	82
Issue number	1-3
Pages (from-to)	249-253
ISSN	0924-4247
DOIs	https://doi.org/10.1016/S0924-4247(99)00372-6
Publication status	Published - 2000

Keywords

Oxygen plasma
Anodic bonding
Surface activation
Packaging

Access to Document

10.1016/S0924-4247(99)00372-6

OpenUrl availability

Full text

Cite this

@article{0501e0e3422844219f737a229a7856e2,

title = "Low temperature anodic bonding to silicon nitride",

abstract = "Low-temperature anodic bonding to stoichiometric silicon nitride surfaces has been performed in the temperature range from 3508C to 4008C. It is shown that the bonding is improved considerably if the nitride surfaces are either oxidized or exposed to an oxygen plasma prior to the bonding. Both bulk and thin-film glasses were used in the bonding experiments. Bond quality was evaluated using a tensile test on structured dies. The effect of oxygen-based pre-treatments of the nitride surface on the bond quality has been evaluated. Bond strengths up to 35 Nrmm2 and yields up to 100% were obtained.",

keywords = "Oxygen plasma, Anodic bonding, Surface activation, Packaging",

author = "Steen Weichel and Reus, {Roger De} and Salim Bouaidat and Peter Rasmussen and Ole Hansen and Karen Birkelund and Dirac, {Paul Andreas Holger}",

year = "2000",

doi = "10.1016/S0924-4247(99)00372-6",

language = "English",

volume = "82",

pages = "249--253",

journal = "Sensors and Actuators A: Physical",

issn = "0924-4247",

publisher = "Elsevier",

number = "1-3",

}

TY - JOUR

T1 - Low temperature anodic bonding to silicon nitride

AU - Weichel, Steen

AU - Reus, Roger De

AU - Bouaidat, Salim

AU - Rasmussen, Peter

AU - Hansen, Ole

AU - Birkelund, Karen

AU - Dirac, Paul Andreas Holger

PY - 2000

Y1 - 2000

N2 - Low-temperature anodic bonding to stoichiometric silicon nitride surfaces has been performed in the temperature range from 3508C to 4008C. It is shown that the bonding is improved considerably if the nitride surfaces are either oxidized or exposed to an oxygen plasma prior to the bonding. Both bulk and thin-film glasses were used in the bonding experiments. Bond quality was evaluated using a tensile test on structured dies. The effect of oxygen-based pre-treatments of the nitride surface on the bond quality has been evaluated. Bond strengths up to 35 Nrmm2 and yields up to 100% were obtained.

AB - Low-temperature anodic bonding to stoichiometric silicon nitride surfaces has been performed in the temperature range from 3508C to 4008C. It is shown that the bonding is improved considerably if the nitride surfaces are either oxidized or exposed to an oxygen plasma prior to the bonding. Both bulk and thin-film glasses were used in the bonding experiments. Bond quality was evaluated using a tensile test on structured dies. The effect of oxygen-based pre-treatments of the nitride surface on the bond quality has been evaluated. Bond strengths up to 35 Nrmm2 and yields up to 100% were obtained.

KW - Oxygen plasma

KW - Anodic bonding

KW - Surface activation

KW - Packaging

U2 - 10.1016/S0924-4247(99)00372-6

DO - 10.1016/S0924-4247(99)00372-6

M3 - Journal article

SN - 0924-4247

VL - 82

SP - 249

EP - 253

JO - Sensors and Actuators A: Physical

JF - Sensors and Actuators A: Physical

IS - 1-3

ER -

Low temperature anodic bonding to silicon nitride

Abstract

Keywords

Access to Document

OpenUrl availability

Fingerprint

Cite this