Low temperature anodic bonding to silicon nitride

Steen Weichel, Roger De Reus, Salim Bouaidat, Peter Rasmussen, Ole Hansen, Karen Birkelund, Paul Andreas Holger Dirac

    Research output: Contribution to journalJournal articleResearchpeer-review


    Low-temperature anodic bonding to stoichiometric silicon nitride surfaces has been performed in the temperature range from 3508C to 4008C. It is shown that the bonding is improved considerably if the nitride surfaces are either oxidized or exposed to an oxygen plasma prior to the bonding. Both bulk and thin-film glasses were used in the bonding experiments. Bond quality was evaluated using a tensile test on structured dies. The effect of oxygen-based pre-treatments of the nitride surface on the bond quality has been evaluated. Bond strengths up to 35 Nrmm2 and yields up to 100% were obtained.
    Original languageEnglish
    JournalSensors and Actuators A: Physical
    Issue number1-3
    Pages (from-to)249-253
    Publication statusPublished - 2000


    • Oxygen plasma
    • Anodic bonding
    • Surface activation
    • Packaging

    Cite this

    Weichel, S., Reus, R. D., Bouaidat, S., Rasmussen, P., Hansen, O., Birkelund, K., & Dirac, P. A. H. (2000). Low temperature anodic bonding to silicon nitride. Sensors and Actuators A: Physical, 82(1-3), 249-253. https://doi.org/10.1016/S0924-4247(99)00372-6