Abstract
The exploitation of floating-gate MOS transistors as reference
current and voltage sources is investigated. Test structures of
common source and common drain floating-gate devices have been
implemented in a commercially available 0.8 micron double-poly
CMOS process. The measurements performed promise a good
maintenance of the operating point of the floating-gate devices.
Examples of utilizing of such bias sources in low-noise sensor
preamplifiers are discussed.
Original language | English |
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Title of host publication | Proc. 1st Electronic Circuits and Systems Conference |
Place of Publication | Bratislava |
Publisher | Slovak University of Technology |
Publication date | 1997 |
Pages | 125-128 |
Publication status | Published - 1997 |
Event | 1st Electronic Circuits and Systems Conference (ECS'97) - Bratislava Duration: 1 Jan 1997 → … |
Conference
Conference | 1st Electronic Circuits and Systems Conference (ECS'97) |
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City | Bratislava |
Period | 01/01/1997 → … |