The exploitation of floating-gate MOS transistors as reference current and voltage sources is investigated. Test structures of common source and common drain floating-gate devices have been implemented in a commercially available 0.8 micron double-poly CMOS process. The measurements performed promise a good maintenance of the operating point of the floating-gate devices. Examples of utilizing of such bias sources in low-noise sensor preamplifiers are discussed.
|Title of host publication||Proc. 1st Electronic Circuits and Systems Conference|
|Place of Publication||Bratislava|
|Publisher||Slovak University of Technology|
|Publication status||Published - 1997|
|Event||1st Electronic Circuits and Systems Conference (ECS'97) - Bratislava|
Duration: 1 Jan 1997 → …
|Conference||1st Electronic Circuits and Systems Conference (ECS'97)|
|Period||01/01/1997 → …|
Igor, M. (1997). Low Noise Bias Current/Voltage References Based on Floating-Gate MOS Transistors. In Proc. 1st Electronic Circuits and Systems Conference (pp. 125-128). Slovak University of Technology.