Abstract
The exploitation of floating-gate MOS transistors as reference
current and voltage sources is investigated. Test structures of
common source and common drain floating-gate devices have been
implemented in a commercially available 0.8 micron double-poly
CMOS process. The measurements performed promise a good
maintenance of the operating point of the floating-gate devices.
Examples of utilizing of such bias sources in low-noise sensor
preamplifiers are discussed.
| Original language | English |
|---|---|
| Title of host publication | Proc. 1st Electronic Circuits and Systems Conference |
| Place of Publication | Bratislava |
| Publisher | Slovak University of Technology |
| Publication date | 1997 |
| Pages | 125-128 |
| Publication status | Published - 1997 |
| Event | 1st Electronic Circuits and Systems Conference (ECS'97) - Bratislava Duration: 1 Jan 1997 → … |
Conference
| Conference | 1st Electronic Circuits and Systems Conference (ECS'97) |
|---|---|
| City | Bratislava |
| Period | 01/01/1997 → … |
Cite this
Igor, M. (1997). Low Noise Bias Current/Voltage References Based on
Floating-Gate MOS Transistors. In Proc. 1st Electronic Circuits and Systems Conference (pp. 125-128). Slovak University of Technology.