Low Noise Bias Current/Voltage References Based on Floating-Gate MOS Transistors

Mucha Igor

    Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review


    The exploitation of floating-gate MOS transistors as reference current and voltage sources is investigated. Test structures of common source and common drain floating-gate devices have been implemented in a commercially available 0.8 micron double-poly CMOS process. The measurements performed promise a good maintenance of the operating point of the floating-gate devices. Examples of utilizing of such bias sources in low-noise sensor preamplifiers are discussed.
    Original languageEnglish
    Title of host publicationProc. 1st Electronic Circuits and Systems Conference
    Place of PublicationBratislava
    PublisherSlovak University of Technology
    Publication date1997
    Publication statusPublished - 1997
    Event1st Electronic Circuits and Systems Conference - Bratislava, Slovakia
    Duration: 4 Sept 19975 Sept 1997
    Conference number: 1


    Conference1st Electronic Circuits and Systems Conference

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