Low Noise Bias Current/Voltage References Based on Floating-Gate MOS Transistors

Mucha Igor

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    Abstract

    The exploitation of floating-gate MOS transistors as reference current and voltage sources is investigated. Test structures of common source and common drain floating-gate devices have been implemented in a commercially available 0.8 micron double-poly CMOS process. The measurements performed promise a good maintenance of the operating point of the floating-gate devices. Examples of utilizing of such bias sources in low-noise sensor preamplifiers are discussed.
    Original languageEnglish
    Title of host publicationProc. 1st Electronic Circuits and Systems Conference
    Place of PublicationBratislava
    PublisherSlovak University of Technology
    Publication date1997
    Pages125-128
    Publication statusPublished - 1997
    Event1st Electronic Circuits and Systems Conference (ECS'97) - Bratislava
    Duration: 1 Jan 1997 → …

    Conference

    Conference1st Electronic Circuits and Systems Conference (ECS'97)
    CityBratislava
    Period01/01/1997 → …

    Cite this

    Igor, M. (1997). Low Noise Bias Current/Voltage References Based on Floating-Gate MOS Transistors. In Proc. 1st Electronic Circuits and Systems Conference (pp. 125-128). Slovak University of Technology.