Low Noise Bias Current/Voltage References Based on
                Floating-Gate MOS Transistors

Mucha Igor

Low Noise Bias Current/Voltage References Based on Floating-Gate MOS Transistors

Mucha Igor

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

Abstract

The exploitation of floating-gate MOS transistors as reference current and voltage sources is investigated. Test structures of common source and common drain floating-gate devices have been implemented in a commercially available 0.8 micron double-poly CMOS process. The measurements performed promise a good maintenance of the operating point of the floating-gate devices. Examples of utilizing of such bias sources in low-noise sensor preamplifiers are discussed.

Original language	English
Title of host publication	Proc. 1st Electronic Circuits and Systems Conference
Place of Publication	Bratislava
Publisher	Slovak University of Technology
Publication date	1997
Pages	125-128
Publication status	Published - 1997
Event	1st Electronic Circuits and Systems Conference - Bratislava, Slovakia Duration: 4 Sept 1997 → 5 Sept 1997 Conference number: 1

Conference

Conference	1st Electronic Circuits and Systems Conference
Number	1
Country/Territory	Slovakia
City	Bratislava
Period	04/09/1997 → 05/09/1997

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Cite this

@inproceedings{b95ed69bd0de4cd4866df88ee82aa8e0,

title = "Low Noise Bias Current/Voltage References Based on Floating-Gate MOS Transistors",

abstract = "The exploitation of floating-gate MOS transistors as reference current and voltage sources is investigated. Test structures of common source and common drain floating-gate devices have been implemented in a commercially available 0.8 micron double-poly CMOS process. The measurements performed promise a good maintenance of the operating point of the floating-gate devices. Examples of utilizing of such bias sources in low-noise sensor preamplifiers are discussed.",

author = "Mucha Igor",

year = "1997",

language = "English",

pages = "125--128",

booktitle = "Proc. 1st Electronic Circuits and Systems Conference",

publisher = "Slovak University of Technology",

note = "1st Electronic Circuits and Systems Conference, ECS'97 ; Conference date: 04-09-1997 Through 05-09-1997",

}

TY - GEN

T1 - Low Noise Bias Current/Voltage References Based on Floating-Gate MOS Transistors

AU - Igor, Mucha

N1 - Conference code: 1

PY - 1997

Y1 - 1997

N2 - The exploitation of floating-gate MOS transistors as reference current and voltage sources is investigated. Test structures of common source and common drain floating-gate devices have been implemented in a commercially available 0.8 micron double-poly CMOS process. The measurements performed promise a good maintenance of the operating point of the floating-gate devices. Examples of utilizing of such bias sources in low-noise sensor preamplifiers are discussed.

AB - The exploitation of floating-gate MOS transistors as reference current and voltage sources is investigated. Test structures of common source and common drain floating-gate devices have been implemented in a commercially available 0.8 micron double-poly CMOS process. The measurements performed promise a good maintenance of the operating point of the floating-gate devices. Examples of utilizing of such bias sources in low-noise sensor preamplifiers are discussed.

M3 - Article in proceedings

SP - 125

EP - 128

BT - Proc. 1st Electronic Circuits and Systems Conference

PB - Slovak University of Technology

CY - Bratislava

T2 - 1st Electronic Circuits and Systems Conference

Y2 - 4 September 1997 through 5 September 1997

ER -