Low-loss silicon nitride AWG demultiplexer heterogeneously integrated with hybrid III-V/Silicon photodetectors

Molly Piels, Jared F. Bauters, Michael L. Davenport, Martijn J R Heck, John E. Bowers

Research output: Contribution to journalJournal articleResearchpeer-review


A unique and novel platform that combines III-V and silicon photonic components with ultra-low loss silicon nitride waveguides for monolithic integration of novel photonic circuits is presented. Successful (proof-of-principle) integration of eight hybrid III-V/silicon photodetectors and an arrayed waveguide grating is shown. The InGaAs photodiodes in this platform had average fiber-coupled responsivity of 0.36 A/W at 1550 nm, 30 GHz electrical bandwidth, and operated up to 50 Gb/s. The AWG had an insertion loss of 0.85 dB and adjacent-channel cross-talk less than-38 dB. © 2013 IEEE.
Original languageEnglish
JournalJournal of Lightwave Technology
Issue number4
Pages (from-to)817-823
Publication statusPublished - 2014
Externally publishedYes


  • Atomic and Molecular Physics, and Optics
  • Optical receivers
  • photonic integration
  • silicon photonics
  • wavelength division multiplexing
  • Electrical bandwidth
  • InGaAs photodiodes
  • Monolithic integration
  • Photonic circuits
  • Photonic integrations
  • Proof of principles
  • Silicon nitride waveguides
  • Silicon photonics
  • Monolithic integrated circuits
  • Photodetectors
  • Photonic devices
  • Photonics
  • Photons
  • Silicon nitride
  • Wavelength division multiplexing
  • Arrayed waveguide gratings


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