Abstract
A unique and novel platform that combines III-V and silicon photonic components with ultra-low loss silicon nitride waveguides for monolithic integration of novel photonic circuits is presented. Successful (proof-of-principle) integration of eight hybrid III-V/silicon photodetectors and an arrayed waveguide grating is shown. The InGaAs photodiodes in this platform had average fiber-coupled responsivity of 0.36 A/W at 1550 nm, 30 GHz electrical bandwidth, and operated up to 50 Gb/s. The AWG had an insertion loss of 0.85 dB and adjacent-channel cross-talk less than-38 dB. © 2013 IEEE.
| Original language | English |
|---|---|
| Journal | Journal of Lightwave Technology |
| Volume | 32 |
| Issue number | 4 |
| Pages (from-to) | 817-823 |
| ISSN | 0733-8724 |
| DOIs | |
| Publication status | Published - 2014 |
| Externally published | Yes |
Keywords
- Atomic and Molecular Physics, and Optics
- Optical receivers
- photonic integration
- silicon photonics
- wavelength division multiplexing
- Electrical bandwidth
- InGaAs photodiodes
- Monolithic integration
- Photonic circuits
- Photonic integrations
- Proof of principles
- Silicon nitride waveguides
- Silicon photonics
- Monolithic integrated circuits
- Photodetectors
- Photonic devices
- Photonics
- Photons
- Silicon nitride
- Wavelength division multiplexing
- Arrayed waveguide gratings