Abstract
The capability of misfit dislocations to generate nanostructures in the bulk of Si1-xGex/Si heteroepitaxial systems is demonstrated. It is shown that dislocation slip originating from compositionally graded Si1-xGex layers can produce a range of low-dimensional structures including nanowires, nanodots, and mosaic superlattices. Formation of the nanostructures is achieved in parallel processing, through a simple two-step cycle which includes growth of layered planar structures and postgrowth annealing. (C) 1997 American Institute of Physics.
Original language | English |
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Journal | Applied Physics Letters |
Volume | 71 |
Issue number | 14 |
Pages (from-to) | 1972-1974 |
ISSN | 0003-6951 |
DOIs | |
Publication status | Published - 1997 |
Bibliographical note
Copyright (1997) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.Keywords
- RELAXATION