The capability of misfit dislocations to generate nanostructures in the bulk of Si1-xGex/Si heteroepitaxial systems is demonstrated. It is shown that dislocation slip originating from compositionally graded Si1-xGex layers can produce a range of low-dimensional structures including nanowires, nanodots, and mosaic superlattices. Formation of the nanostructures is achieved in parallel processing, through a simple two-step cycle which includes growth of layered planar structures and postgrowth annealing. (C) 1997 American Institute of Physics.
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