Low-dimensional structures generated by misfit dislocations in the bulk of Si1 - xGex/Si heteroepitaxial systems

Sergey Y. Shiryaev, Flemming Jensen, Jon Wulff Petersen, Lundsgaard J. Hansen, Nylandsted Arne Larsen

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    Abstract

    The capability of misfit dislocations to generate nanostructures in the bulk of Si1-xGex/Si heteroepitaxial systems is demonstrated. It is shown that dislocation slip originating from compositionally graded Si1-xGex layers can produce a range of low-dimensional structures including nanowires, nanodots, and mosaic superlattices. Formation of the nanostructures is achieved in parallel processing, through a simple two-step cycle which includes growth of layered planar structures and postgrowth annealing. (C) 1997 American Institute of Physics.
    Original languageEnglish
    JournalApplied Physics Letters
    Volume71
    Issue number14
    Pages (from-to)1972-1974
    ISSN0003-6951
    DOIs
    Publication statusPublished - 1997

    Bibliographical note

    Copyright (1997) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

    Keywords

    • RELAXATION

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