An Indium Phosphide (InP) Double Heterojunction Bipolar Transistor (DHBT) process has been utilized to design two doublers to cover the 94 GHz and 188 GHz bands. The 94 GHz doubler employs 4-finger DHBTs and provides conversion loss of 2 dB. A maximum output power of nearly 3 dBm is measured while the doubler is not entirely saturated. The DC power consumption is 132 mW. The 188 GHz doubler utilizes a 1-finger DHBT. Conversion loss of 2 dB and a maximum output power of −1 dBm are achieved at 188 GHz with on-wafer measurements. The DC power consumption is 24 mW under saturated conditions. Both doublers operate over a broad bandwidth. The total circuit area of each chip is 1.41 mm2.
|Conference||2017 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits|
|Period||20/04/2017 → 21/04/2017|
- Frequency doublers
- Frequency multiplier
- Heterojunction bipolar transistor (HBT)
- Indium phosphide
- Millimeterwave monolithic integrated circuits