Low conversion loss 94 GHz and 188 GHz doublers in InP DHBT technology

Vitaliy Zhurbenko; Tom Keinicke Johansen; Michele Squartecchia; Virginio Midili; Oleksandr Rybalko; Muriel Riet; Jean‐Yves Dupuy; Virginie Nodjiadjim; Agnieszka Konczykowska

doi:10.1109/INMMIC.2017.7927292

Low conversion loss 94 GHz and 188 GHz doublers in InP DHBT technology

Vitaliy Zhurbenko, Tom Keinicke Johansen, Michele Squartecchia, Virginio Midili, Oleksandr Rybalko, Muriel Riet, Jean‐Yves Dupuy, Virginie Nodjiadjim, Agnieszka Konczykowska

III-V Lab

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

533 Downloads (Orbit)

Abstract

An Indium Phosphide (InP) Double Heterojunction Bipolar Transistor (DHBT) process has been utilized to design two doublers to cover the 94 GHz and 188 GHz bands. The 94 GHz doubler employs 4-finger DHBTs and provides conversion loss of 2 dB. A maximum output power of nearly 3 dBm is measured while the doubler is not entirely saturated. The DC power consumption is 132 mW. The 188 GHz doubler utilizes a 1-finger DHBT. Conversion loss of 2 dB and a maximum output power of −1 dBm are achieved at 188 GHz with on-wafer measurements. The DC power consumption is 24 mW under saturated conditions. Both doublers operate over a broad bandwidth. The total circuit area of each chip is 1.41 mm2.

Original language	English
Title of host publication	Proceedings of 2017 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits
Number of pages	3
Publisher	IEEE
Publication date	2017
ISBN (Print)	978-1-5090-5862-4
DOIs	https://doi.org/10.1109/INMMIC.2017.7927292
Publication status	Published - 2017
Event	2017 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits - Graz, Austria Duration: 20 Apr 2017 → 21 Apr 2017

Conference

Conference	2017 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits
Country/Territory	Austria
City	Graz
Period	20/04/2017 → 21/04/2017

Keywords

Frequency doublers
Frequency multiplier
Heterojunction bipolar transistor (HBT)
Indium phosphide
Millimeterwave monolithic integrated circuits

Access to Document

10.1109/INMMIC.2017.7927292

Doublers v3Accepted author manuscript, 563 KB

OpenUrl availability

Full text

Cite this

Zhurbenko, V., Johansen, T. K., Squartecchia, M., Midili, V., Rybalko, O., Riet, M., Dupuy, JY., Nodjiadjim, V., & Konczykowska, A. (2017). Low conversion loss 94 GHz and 188 GHz doublers in InP DHBT technology. In Proceedings of 2017 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits IEEE. https://doi.org/10.1109/INMMIC.2017.7927292

@inproceedings{274081baca984636aac9ebccbe045bec,

title = "Low conversion loss 94 GHz and 188 GHz doublers in InP DHBT technology",

abstract = "An Indium Phosphide (InP) Double Heterojunction Bipolar Transistor (DHBT) process has been utilized to design two doublers to cover the 94 GHz and 188 GHz bands. The 94 GHz doubler employs 4-finger DHBTs and provides conversion loss of 2 dB. A maximum output power of nearly 3 dBm is measured while the doubler is not entirely saturated. The DC power consumption is 132 mW. The 188 GHz doubler utilizes a 1-finger DHBT. Conversion loss of 2 dB and a maximum output power of −1 dBm are achieved at 188 GHz with on-wafer measurements. The DC power consumption is 24 mW under saturated conditions. Both doublers operate over a broad bandwidth. The total circuit area of each chip is 1.41 mm2.",

keywords = "Frequency doublers, Frequency multiplier, Heterojunction bipolar transistor (HBT), Indium phosphide, Millimeterwave monolithic integrated circuits",

author = "Vitaliy Zhurbenko and Johansen, {Tom Keinicke} and Michele Squartecchia and Virginio Midili and Oleksandr Rybalko and Muriel Riet and Jean‐Yves Dupuy and Virginie Nodjiadjim and Agnieszka Konczykowska",

year = "2017",

doi = "10.1109/INMMIC.2017.7927292",

language = "English",

isbn = "978-1-5090-5862-4",

booktitle = "Proceedings of 2017 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits",

publisher = "IEEE",

address = "United States",

note = "2017 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, 2017 INMMiC ; Conference date: 20-04-2017 Through 21-04-2017",

}

Zhurbenko, V , Johansen, TK, Squartecchia, M, Midili, V, Rybalko, O, Riet, M, Dupuy, JY, Nodjiadjim, V & Konczykowska, A 2017, Low conversion loss 94 GHz and 188 GHz doublers in InP DHBT technology. in Proceedings of 2017 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits. IEEE, 2017 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, Graz, Austria, 20/04/2017. https://doi.org/10.1109/INMMIC.2017.7927292

Low conversion loss 94 GHz and 188 GHz doublers in InP DHBT technology. / Zhurbenko, Vitaliy ; Johansen, Tom Keinicke; Squartecchia, Michele et al.
Proceedings of 2017 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits. IEEE, 2017.

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

TY - GEN

T1 - Low conversion loss 94 GHz and 188 GHz doublers in InP DHBT technology

AU - Zhurbenko, Vitaliy

AU - Johansen, Tom Keinicke

AU - Squartecchia, Michele

AU - Midili, Virginio

AU - Rybalko, Oleksandr

AU - Riet, Muriel

AU - Dupuy, Jean‐Yves

AU - Nodjiadjim, Virginie

AU - Konczykowska, Agnieszka

PY - 2017

Y1 - 2017

N2 - An Indium Phosphide (InP) Double Heterojunction Bipolar Transistor (DHBT) process has been utilized to design two doublers to cover the 94 GHz and 188 GHz bands. The 94 GHz doubler employs 4-finger DHBTs and provides conversion loss of 2 dB. A maximum output power of nearly 3 dBm is measured while the doubler is not entirely saturated. The DC power consumption is 132 mW. The 188 GHz doubler utilizes a 1-finger DHBT. Conversion loss of 2 dB and a maximum output power of −1 dBm are achieved at 188 GHz with on-wafer measurements. The DC power consumption is 24 mW under saturated conditions. Both doublers operate over a broad bandwidth. The total circuit area of each chip is 1.41 mm2.

AB - An Indium Phosphide (InP) Double Heterojunction Bipolar Transistor (DHBT) process has been utilized to design two doublers to cover the 94 GHz and 188 GHz bands. The 94 GHz doubler employs 4-finger DHBTs and provides conversion loss of 2 dB. A maximum output power of nearly 3 dBm is measured while the doubler is not entirely saturated. The DC power consumption is 132 mW. The 188 GHz doubler utilizes a 1-finger DHBT. Conversion loss of 2 dB and a maximum output power of −1 dBm are achieved at 188 GHz with on-wafer measurements. The DC power consumption is 24 mW under saturated conditions. Both doublers operate over a broad bandwidth. The total circuit area of each chip is 1.41 mm2.

KW - Frequency doublers

KW - Frequency multiplier

KW - Heterojunction bipolar transistor (HBT)

KW - Indium phosphide

KW - Millimeterwave monolithic integrated circuits

U2 - 10.1109/INMMIC.2017.7927292

DO - 10.1109/INMMIC.2017.7927292

M3 - Article in proceedings

SN - 978-1-5090-5862-4

BT - Proceedings of 2017 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits

PB - IEEE

T2 - 2017 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits

Y2 - 20 April 2017 through 21 April 2017

ER -

Low conversion loss 94 GHz and 188 GHz doublers in InP DHBT technology

Abstract

Conference

Keywords

Access to Document

OpenUrl availability

Fingerprint

Cite this