Low conversion loss 94 GHz and 188 GHz doublers in InP DHBT technology

Vitaliy Zhurbenko, Tom Keinicke Johansen, Michele Squartecchia, Virginio Midili, Oleksandr Rybalko, Muriel Riet, Jean‐Yves Dupuy, Virginie Nodjiadjim, Agnieszka Konczykowska

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    Abstract

    An Indium Phosphide (InP) Double Heterojunction Bipolar Transistor (DHBT) process has been utilized to design two doublers to cover the 94 GHz and 188 GHz bands. The 94 GHz doubler employs 4-finger DHBTs and provides conversion loss of 2 dB. A maximum output power of nearly 3 dBm is measured while the doubler is not entirely saturated. The DC power consumption is 132 mW. The 188 GHz doubler utilizes a 1-finger DHBT. Conversion loss of 2 dB and a maximum output power of −1 dBm are achieved at 188 GHz with on-wafer measurements. The DC power consumption is 24 mW under saturated conditions. Both doublers operate over a broad bandwidth. The total circuit area of each chip is 1.41 mm2.
    Original languageEnglish
    Title of host publicationProceedings of 2017 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits
    Number of pages3
    PublisherIEEE
    Publication date2017
    ISBN (Print)978-1-5090-5862-4
    DOIs
    Publication statusPublished - 2017
    Event2017 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits - Graz, Austria
    Duration: 20 Apr 201721 Apr 2017

    Conference

    Conference2017 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits
    Country/TerritoryAustria
    CityGraz
    Period20/04/201721/04/2017

    Keywords

    • Frequency doublers
    • Frequency multiplier
    • Heterojunction bipolar transistor (HBT)
    • Indium phosphide
    • Millimeterwave monolithic integrated circuits

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