Loss Analysis of GaN Based Partial Parallel Isolated Bidirectional Full Bridge Boost Converter

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Abstract

A theoretical loss analysis is presented for GaN switches, for which conduction and switching losses are considered, and for planar transformers, where winding and core losses are considered. The analysis is then used to make a comparison of the losses in the partial parallel isolated full bridge boost converter and the isolated full bridge boost converter.
Original languageEnglish
Title of host publicationProceedings of 3rd International Conference on Intelligent Green Building and Smart Grid
Number of pages4
PublisherIEEE
Publication date2018
ISBN (Print)9781538606605
DOIs
Publication statusPublished - 2018
Event3rd International Conference on Intelligent Green Building and Smart Grid - National Ilan University, Yilan, Taiwan, Province of China
Duration: 22 Apr 201825 Apr 2018
http://igbsg.ntust.edu.tw/index.php

Conference

Conference3rd International Conference on Intelligent Green Building and Smart Grid
LocationNational Ilan University
CountryTaiwan, Province of China
CityYilan
Period22/04/201825/04/2018
Internet address

Keywords

  • dc-dc converter
  • Bidirectional
  • Full bridge boost
  • Partial parallel

Cite this

Jørgensen, K. L., Mira Albert, M. D. C., Zhang, Z., & Andersen, M. A. E. (2018). Loss Analysis of GaN Based Partial Parallel Isolated Bidirectional Full Bridge Boost Converter. In Proceedings of 3rd International Conference on Intelligent Green Building and Smart Grid IEEE. https://doi.org/10.1109/IGBSG.2018.8393535