In this work the point-defect profile In the thin foil has been included in the model for the growth of dislocation loops during HVEM irradiation suggested by Kiritani, Yoshida, Takata, and Maehara ll], and the possible effect of divacancies
is discussed. It is found that there is a fairly wide transition range between the two extreme cases described by Kiritani et al. (the vacancy- and the surface-dominant case); this can directly (without the necessity of a divacancy effect) explain the observation of apparent activation energies for loop growth smaller than 1/2 EMV (where EMV is the vacancy migration energy). Even after the inclusion of the point--defect profiles there are indications that the model cannot fully account for the loop growth behaviour in situations where surface losses and recombination losses are comparable.
Place of Publication | Roskilde, Denmark |
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Publisher | Risø National Laboratory |
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Number of pages | 28 |
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ISBN (Print) | 87-550-0575-6 |
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Publication status | Published - 1978 |
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Series | Risø-M |
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Number | 2142 |
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ISSN | 0418-6435 |
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