Loop growth and point defect profiles during HVEM irradiation

T. Leffers, B.N. Singh

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    Abstract

    In this work the point-defect profile In the thin foil has been included in the model for the growth of dislocation loops during HVEM irradiation suggested by Kiritani, Yoshida, Takata, and Maehara ll], and the possible effect of divacancies
    is discussed. It is found that there is a fairly wide transition range between the two extreme cases described by Kiritani et al. (the vacancy- and the surface-dominant case); this can directly (without the necessity of a divacancy effect) explain the observation of apparent activation energies for loop growth smaller than 1/2 EMV (where EMV is the vacancy migration energy). Even after the inclusion of the point--defect profiles there are indications that the model cannot fully account for the loop growth behaviour in situations where surface losses and recombination losses are comparable.
    Original languageEnglish
    Place of PublicationRoskilde, Denmark
    PublisherRisø National Laboratory
    Number of pages28
    ISBN (Print)87-550-0575-6
    Publication statusPublished - 1978
    SeriesRisø-M
    Number2142
    ISSN0418-6435

    Keywords

    • Risø-M-2142

    Cite this

    Leffers, T., & Singh, B. N. (1978). Loop growth and point defect profiles during HVEM irradiation. Risø National Laboratory. Risø-M, No. 2142