In this work the point-defect profile In the thin foil has been included in the model for the growth of dislocation loops during HVEM irradiation suggested by Kiritani, Yoshida, Takata, and Maehara ll], and the possible effect of divacancies
is discussed. It is found that there is a fairly wide transition range between the two extreme cases described by Kiritani et al. (the vacancy- and the surface-dominant case); this can directly (without the necessity of a divacancy effect) explain the observation of apparent activation energies for loop growth smaller than 1/2 EMV (where EMV is the vacancy migration energy). Even after the inclusion of the point--defect profiles there are indications that the model cannot fully account for the loop growth behaviour in situations where surface losses and recombination losses are comparable.
|Place of Publication||Roskilde, Denmark|
|Publisher||Risø National Laboratory|
|Number of pages||28|
|Publication status||Published - 1978|