Long luminescence lifetime in self-assembled InGaAs/GaAs quantum dots at room temperature

Zhangcheng Xu, Yating Zhang, Jørn Märcher Hvam

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    Abstract

    Time-resolved photoluminescence PL measurements of high-quality self-assembled small In0.5Ga0.5As/GaAs quantum dots QDs show that the PL decay time of the QD ground state transition is nearly constant when the temperature is below 80 K and increases monotonously from 1.0 to 5.5 ns when the temperature increases from 80 to 300 K. The increased radiative lifetime of the QD ground state at higher temperatures is attributed to the thermal population of the subwetting-layer continuum states and could be one of the fundamental reasons for the low modal gain of the QD ground state transition in single-layer self-assembled QD lasers.
    Original languageEnglish
    JournalApplied Physics Letters
    Volume93
    Issue number18
    Pages (from-to)183116
    ISSN0003-6951
    DOIs
    Publication statusPublished - 2008

    Bibliographical note

    Copyright (2008) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

    Keywords

    • TIME
    • EXCITATION
    • PHOTOLUMINESCENCE
    • LASER
    • RESOLVED OPTICAL CHARACTERIZATION
    • EXCITONS
    • MODAL GAIN

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