Abstract
The influence of excitonic localization on the binding energy of biexcitons is investigated for quasi-three-dimensional and quasi-two-dimensional AlxGa1-xAs structures. An increase of the biexciton binding energy is observed for localization energies comparable to or larger than the free biexciton binding energy. A simple analytical model for localization in the weak confinement regime ascribes the increase to a quenching of the additional kinetic energy of the exciton-exciton motion in the biexciton.
| Original language | English |
|---|---|
| Journal | Physical Review B |
| Volume | 59 |
| Issue number | 23 |
| Pages (from-to) | 15405-15408 |
| ISSN | 2469-9950 |
| DOIs | |
| Publication status | Published - 1999 |
Bibliographical note
Copyright (1999) by the American Physical Society.Keywords
- GAAS QUANTUM-WELLS
- DOTS
- PHOTOLUMINESCENCE
- EXCITONIC MOLECULE
- NONLINEAR-OPTICAL-PROPERTIES
- WIRES
- ALXGA1-XAS
- ENERGY
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