Localization-enhanced biexciton binding in semiconductors

Wolfgang Werner Langbein, Jørn Märcher Hvam

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    Abstract

    The influence of excitonic localization on the binding energy of biexcitons is investigated for quasi-three-dimensional and quasi-two-dimensional AlxGa1-xAs structures. An increase of the biexciton binding energy is observed for localization energies comparable to or larger than the free biexciton binding energy. A simple analytical model for localization in the weak confinement regime ascribes the increase to a quenching of the additional kinetic energy of the exciton-exciton motion in the biexciton.
    Original languageEnglish
    JournalPhysical Review B
    Volume59
    Issue number23
    Pages (from-to)15405-15408
    ISSN2469-9950
    DOIs
    Publication statusPublished - 1999

    Bibliographical note

    Copyright (1999) by the American Physical Society.

    Keywords

    • GAAS QUANTUM-WELLS
    • DOTS
    • PHOTOLUMINESCENCE
    • EXCITONIC MOLECULE
    • NONLINEAR-OPTICAL-PROPERTIES
    • WIRES
    • ALXGA1-XAS
    • ENERGY

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