Localization and interaction effects in GaAs/AlGaAs heterostructures modified by He4-ion implantation

Rafael J. Taboryski, E Veje, Poul Erik Lindelof

Research output: Contribution to journalConference articleResearchpeer-review

Abstract

Magnetoresistance is used to study localization and interaction in the 2-dimensional electron layer of 4He-ion implanted GaAs/Al-GaAs modulation doped heterostructures. At very low magnetic fields weak localization magnetoresistance can be fitted to theory, thereby determining the diffusion constant and the phase relaxation rate. An unexpected saturation of the phase relaxation rate at low temperature was found to have an interesting relation to mobility and sample size. In the magnetic field range, where the cyclotron radius becomes of the order of the mean free path, the magnetoresistance was related to the effect of electron-electron interaction. By comparison of the magnetoresistance at different implantation doses, we extracted a remnant quantum correction to the conductivity, which has not earlier been noticed. In samples with two Subbands populated interband scattering is observed to cause spin-orbit effects in the weak localization magnetoresistance.
Original languageEnglish
JournalSurface Science
Volume229
Issue number1-3
Pages (from-to)105-109
ISSN0039-6028
DOIs
Publication statusPublished - 1990
Externally publishedYes
Event8th International Conference on the Electronic Properties of Two-Dimensional Systems - Grenoble, France
Duration: 4 Sep 19898 Sep 1989
Conference number: 8th

Conference

Conference8th International Conference on the Electronic Properties of Two-Dimensional Systems
Number8th
Country/TerritoryFrance
CityGrenoble
Period04/09/198908/09/1989

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