Liquid Solution Phase Epitaxial Growth of Al-doped f-SiC for LEDs

Kai Tang, Xiang Ma, Casper van der Eijk, Haiyan Ou

Research output: Contribution to conferencePaperResearchpeer-review

214 Downloads (Pure)

Abstract

This paper presents our laboratory results of growing a new type of compound semiconductor crystal, i.e. fluorescent silicon carbide (f-SiC), by using liquid solution phase epitaxial (LPE) technology. This new type of f-SiC based white LEDs (WLEDs) represents higher luminous efficiency, better light quality and longer lifespan, compared to the current yellow phosphor based white LEDs. Liquid phase epitaxy technology is able to yield a high crystalline quality in terms of structural perfection owing to the fact that it is a near equilibrium process. In addition, the technological equipment required for LPE is relatively inexpensive. The fundamental backgrounds for LPE growth of Al-doped 4H-SiC are first introduced and elaborated by new thermodynamic and crystal growth models. Based on theoretical analyses, the new designed experimental apparatus is then constructed. The experimental results are presented and discussed. Since operational temperature of LPE growth is much lower than that currently used in physical vapour transport (PVT) process, it is expected to save the energy consumption for SiC crystal growth.
Original languageEnglish
Publication date2018
Publication statusPublished - 2018
EventE-MRS Spring Meeting 2017 - Strasbourg Convention Centre , Stasbourg, France
Duration: 22 May 201726 May 2017
http://www.european-mrs.com/meetings/2017-spring-meeting

Conference

ConferenceE-MRS Spring Meeting 2017
LocationStrasbourg Convention Centre
CountryFrance
CityStasbourg
Period22/05/201726/05/2017
Internet address

Bibliographical note

E-MRS Spring Meeting 2017 - Stasbourg, France, Symposium O, paper O.2.1

Cite this

Tang, K., Ma, X., van der Eijk, C., & Ou, H. (2018). Liquid Solution Phase Epitaxial Growth of Al-doped f-SiC for LEDs. Paper presented at E-MRS Spring Meeting 2017, Stasbourg, France.
Tang, Kai ; Ma, Xiang ; van der Eijk, Casper ; Ou, Haiyan. / Liquid Solution Phase Epitaxial Growth of Al-doped f-SiC for LEDs. Paper presented at E-MRS Spring Meeting 2017, Stasbourg, France.
@conference{ec6d69758f1344ccadc14a869c7c5d96,
title = "Liquid Solution Phase Epitaxial Growth of Al-doped f-SiC for LEDs",
abstract = "This paper presents our laboratory results of growing a new type of compound semiconductor crystal, i.e. fluorescent silicon carbide (f-SiC), by using liquid solution phase epitaxial (LPE) technology. This new type of f-SiC based white LEDs (WLEDs) represents higher luminous efficiency, better light quality and longer lifespan, compared to the current yellow phosphor based white LEDs. Liquid phase epitaxy technology is able to yield a high crystalline quality in terms of structural perfection owing to the fact that it is a near equilibrium process. In addition, the technological equipment required for LPE is relatively inexpensive. The fundamental backgrounds for LPE growth of Al-doped 4H-SiC are first introduced and elaborated by new thermodynamic and crystal growth models. Based on theoretical analyses, the new designed experimental apparatus is then constructed. The experimental results are presented and discussed. Since operational temperature of LPE growth is much lower than that currently used in physical vapour transport (PVT) process, it is expected to save the energy consumption for SiC crystal growth.",
author = "Kai Tang and Xiang Ma and {van der Eijk}, Casper and Haiyan Ou",
note = "E-MRS Spring Meeting 2017 - Stasbourg, France, Symposium O, paper O.2.1; E-MRS Spring Meeting 2017 ; Conference date: 22-05-2017 Through 26-05-2017",
year = "2018",
language = "English",
url = "http://www.european-mrs.com/meetings/2017-spring-meeting",

}

Tang, K, Ma, X, van der Eijk, C & Ou, H 2018, 'Liquid Solution Phase Epitaxial Growth of Al-doped f-SiC for LEDs', Paper presented at E-MRS Spring Meeting 2017, Stasbourg, France, 22/05/2017 - 26/05/2017.

Liquid Solution Phase Epitaxial Growth of Al-doped f-SiC for LEDs. / Tang, Kai; Ma, Xiang; van der Eijk, Casper ; Ou, Haiyan.

2018. Paper presented at E-MRS Spring Meeting 2017, Stasbourg, France.

Research output: Contribution to conferencePaperResearchpeer-review

TY - CONF

T1 - Liquid Solution Phase Epitaxial Growth of Al-doped f-SiC for LEDs

AU - Tang, Kai

AU - Ma, Xiang

AU - van der Eijk, Casper

AU - Ou, Haiyan

N1 - E-MRS Spring Meeting 2017 - Stasbourg, France, Symposium O, paper O.2.1

PY - 2018

Y1 - 2018

N2 - This paper presents our laboratory results of growing a new type of compound semiconductor crystal, i.e. fluorescent silicon carbide (f-SiC), by using liquid solution phase epitaxial (LPE) technology. This new type of f-SiC based white LEDs (WLEDs) represents higher luminous efficiency, better light quality and longer lifespan, compared to the current yellow phosphor based white LEDs. Liquid phase epitaxy technology is able to yield a high crystalline quality in terms of structural perfection owing to the fact that it is a near equilibrium process. In addition, the technological equipment required for LPE is relatively inexpensive. The fundamental backgrounds for LPE growth of Al-doped 4H-SiC are first introduced and elaborated by new thermodynamic and crystal growth models. Based on theoretical analyses, the new designed experimental apparatus is then constructed. The experimental results are presented and discussed. Since operational temperature of LPE growth is much lower than that currently used in physical vapour transport (PVT) process, it is expected to save the energy consumption for SiC crystal growth.

AB - This paper presents our laboratory results of growing a new type of compound semiconductor crystal, i.e. fluorescent silicon carbide (f-SiC), by using liquid solution phase epitaxial (LPE) technology. This new type of f-SiC based white LEDs (WLEDs) represents higher luminous efficiency, better light quality and longer lifespan, compared to the current yellow phosphor based white LEDs. Liquid phase epitaxy technology is able to yield a high crystalline quality in terms of structural perfection owing to the fact that it is a near equilibrium process. In addition, the technological equipment required for LPE is relatively inexpensive. The fundamental backgrounds for LPE growth of Al-doped 4H-SiC are first introduced and elaborated by new thermodynamic and crystal growth models. Based on theoretical analyses, the new designed experimental apparatus is then constructed. The experimental results are presented and discussed. Since operational temperature of LPE growth is much lower than that currently used in physical vapour transport (PVT) process, it is expected to save the energy consumption for SiC crystal growth.

M3 - Paper

ER -

Tang K, Ma X, van der Eijk C, Ou H. Liquid Solution Phase Epitaxial Growth of Al-doped f-SiC for LEDs. 2018. Paper presented at E-MRS Spring Meeting 2017, Stasbourg, France.