Liquid Phase Epitaxial Growth of Al-doped f-SiC for White Light-Emitting Diodes

Kai Tang, Xiang Ma, Casper can der Eijk, Haiyan Ou, Yi Wei

Research output: Contribution to conferenceConference abstract for conferenceResearchpeer-review

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Abstract

The present paper focuses on our recent experimental results of growing a new type of compound semiconductor crystal, i.e. fluorescent silicon carbide (f-SiC), using the liquid solution phase epitaxial (LPE) technology. This new type of f-SiC based white LEDs (WLEDs) represents higher luminous efficiency, better light quality and longer lifespan, compared to the current yellow phosphor based white LEDs.Liquid phase epitaxy technology can yield a high crystalline quality in terms of structural perfection owing to the fact that it is a near equilibrium crystalline growth process. In addition, the technological equipment required for LPE is relatively inexpensive. The fundamental backgrounds for LPE growth of Al-doped 6H-SiC are first introduced and elaborated by new thermodynamic and crystal growth models. Based on theoretical analyses, the new designed experimental apparatus is then constructed. The experimental results are presented and discussed. Since operational temperature of LPE growth is much lower than that currently used in physical vapour transport (PVT) process, it is expected to save the energy consumption for SiC crystal growth.
Original languageEnglish
Publication date2017
Number of pages1
Publication statusPublished - 2017
Event5th international workshop on LED and Solar Applications - DTU, Building 101, Kgs. Lyngby, Denmark
Duration: 13 Sep 201714 Sep 2017

Conference

Conference5th international workshop on LED and Solar Applications
LocationDTU, Building 101
CountryDenmark
CityKgs. Lyngby
Period13/09/201714/09/2017

Keywords

  • Fluorescent silicon carbide
  • LPE growth
  • Al-doped
  • Equilibrium analysis
  • Growth rate

Cite this

Tang, K., Ma, X., can der Eijk, C., Ou, H., & Wei, Y. (2017). Liquid Phase Epitaxial Growth of Al-doped f-SiC for White Light-Emitting Diodes. Abstract from 5th international workshop on LED and Solar Applications, Kgs. Lyngby, Denmark.
Tang, Kai ; Ma, Xiang ; can der Eijk, Casper ; Ou, Haiyan ; Wei, Yi. / Liquid Phase Epitaxial Growth of Al-doped f-SiC for White Light-Emitting Diodes. Abstract from 5th international workshop on LED and Solar Applications, Kgs. Lyngby, Denmark.1 p.
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title = "Liquid Phase Epitaxial Growth of Al-doped f-SiC for White Light-Emitting Diodes",
abstract = "The present paper focuses on our recent experimental results of growing a new type of compound semiconductor crystal, i.e. fluorescent silicon carbide (f-SiC), using the liquid solution phase epitaxial (LPE) technology. This new type of f-SiC based white LEDs (WLEDs) represents higher luminous efficiency, better light quality and longer lifespan, compared to the current yellow phosphor based white LEDs.Liquid phase epitaxy technology can yield a high crystalline quality in terms of structural perfection owing to the fact that it is a near equilibrium crystalline growth process. In addition, the technological equipment required for LPE is relatively inexpensive. The fundamental backgrounds for LPE growth of Al-doped 6H-SiC are first introduced and elaborated by new thermodynamic and crystal growth models. Based on theoretical analyses, the new designed experimental apparatus is then constructed. The experimental results are presented and discussed. Since operational temperature of LPE growth is much lower than that currently used in physical vapour transport (PVT) process, it is expected to save the energy consumption for SiC crystal growth.",
keywords = "Fluorescent silicon carbide, LPE growth, Al-doped, Equilibrium analysis, Growth rate",
author = "Kai Tang and Xiang Ma and {can der Eijk}, Casper and Haiyan Ou and Yi Wei",
year = "2017",
language = "English",
note = "5th international workshop on LED and Solar Applications ; Conference date: 13-09-2017 Through 14-09-2017",

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Tang, K, Ma, X, can der Eijk, C, Ou, H & Wei, Y 2017, 'Liquid Phase Epitaxial Growth of Al-doped f-SiC for White Light-Emitting Diodes' 5th international workshop on LED and Solar Applications, Kgs. Lyngby, Denmark, 13/09/2017 - 14/09/2017, .

Liquid Phase Epitaxial Growth of Al-doped f-SiC for White Light-Emitting Diodes. / Tang, Kai; Ma, Xiang; can der Eijk, Casper ; Ou, Haiyan; Wei, Yi.

2017. Abstract from 5th international workshop on LED and Solar Applications, Kgs. Lyngby, Denmark.

Research output: Contribution to conferenceConference abstract for conferenceResearchpeer-review

TY - ABST

T1 - Liquid Phase Epitaxial Growth of Al-doped f-SiC for White Light-Emitting Diodes

AU - Tang, Kai

AU - Ma, Xiang

AU - can der Eijk, Casper

AU - Ou, Haiyan

AU - Wei, Yi

PY - 2017

Y1 - 2017

N2 - The present paper focuses on our recent experimental results of growing a new type of compound semiconductor crystal, i.e. fluorescent silicon carbide (f-SiC), using the liquid solution phase epitaxial (LPE) technology. This new type of f-SiC based white LEDs (WLEDs) represents higher luminous efficiency, better light quality and longer lifespan, compared to the current yellow phosphor based white LEDs.Liquid phase epitaxy technology can yield a high crystalline quality in terms of structural perfection owing to the fact that it is a near equilibrium crystalline growth process. In addition, the technological equipment required for LPE is relatively inexpensive. The fundamental backgrounds for LPE growth of Al-doped 6H-SiC are first introduced and elaborated by new thermodynamic and crystal growth models. Based on theoretical analyses, the new designed experimental apparatus is then constructed. The experimental results are presented and discussed. Since operational temperature of LPE growth is much lower than that currently used in physical vapour transport (PVT) process, it is expected to save the energy consumption for SiC crystal growth.

AB - The present paper focuses on our recent experimental results of growing a new type of compound semiconductor crystal, i.e. fluorescent silicon carbide (f-SiC), using the liquid solution phase epitaxial (LPE) technology. This new type of f-SiC based white LEDs (WLEDs) represents higher luminous efficiency, better light quality and longer lifespan, compared to the current yellow phosphor based white LEDs.Liquid phase epitaxy technology can yield a high crystalline quality in terms of structural perfection owing to the fact that it is a near equilibrium crystalline growth process. In addition, the technological equipment required for LPE is relatively inexpensive. The fundamental backgrounds for LPE growth of Al-doped 6H-SiC are first introduced and elaborated by new thermodynamic and crystal growth models. Based on theoretical analyses, the new designed experimental apparatus is then constructed. The experimental results are presented and discussed. Since operational temperature of LPE growth is much lower than that currently used in physical vapour transport (PVT) process, it is expected to save the energy consumption for SiC crystal growth.

KW - Fluorescent silicon carbide

KW - LPE growth

KW - Al-doped

KW - Equilibrium analysis

KW - Growth rate

M3 - Conference abstract for conference

ER -

Tang K, Ma X, can der Eijk C, Ou H, Wei Y. Liquid Phase Epitaxial Growth of Al-doped f-SiC for White Light-Emitting Diodes. 2017. Abstract from 5th international workshop on LED and Solar Applications, Kgs. Lyngby, Denmark.