Line broadening  caused by Coulomb  carrier-carrier  correlations and dynamics  of carrier capture  and emission in quantum  dots

Alexander V Uskov; Ingibjörg Magnúsdóttir; Bjarne Tromborg; Jesper Mørk; R. Lang

doi:10.1063/1.1401778

Line broadening caused by Coulomb carrier-carrier correlations and dynamics of carrier capture and emission in quantum dots

Alexander V Uskov
, Ingibjörg Magnúsdóttir
, Bjarne Tromborg
, Jesper Mørk
, R. Lang

Tokyo University of Agriculture and Technology

Research output: Contribution to journal › Journal article › Research › peer-review

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Abstract

Mechanisms of pure dephasing in quantum dots due to Coulomb correlations and the dynamics of carrier capture and emission are suggested, and a phenomenological model for the dephasing is developed. It is shown that, if the rates of these capture and emission processes are sufficiently high, significant homogeneous line broadening of the order of several meV can result.

Original language	English
Journal	Applied Physics Letters
Volume	79
Issue number	11
Pages (from-to)	1679-1681
ISSN	0003-6951
DOIs	https://doi.org/10.1063/1.1401778
Publication status	Published - 2001

Bibliographical note

Copyright (2001) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

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abstract = "Mechanisms of pure dephasing in quantum dots due to Coulomb correlations and the dynamics of carrier capture and emission are suggested, and a phenomenological model for the dephasing is developed. It is shown that, if the rates of these capture and emission processes are sufficiently high, significant homogeneous line broadening of the order of several meV can result.",

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AU - Mørk, Jesper

AU - Lang, R.

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AB - Mechanisms of pure dephasing in quantum dots due to Coulomb correlations and the dynamics of carrier capture and emission are suggested, and a phenomenological model for the dephasing is developed. It is shown that, if the rates of these capture and emission processes are sufficiently high, significant homogeneous line broadening of the order of several meV can result.

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