Limitations in THz Power Generation with Schottky Diode Varactor Frequency Multipliers

Viktor Krozer; G. Loata; J. Grajal

doi:10.1109/THZ.2002.1037603

Limitations in THz Power Generation with Schottky Diode Varactor Frequency Multipliers

Viktor Krozer, G. Loata, J. Grajal

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Abstract

We discuss the limitations in power generation with Schottky diode and HBV (heterostructure barrier varactor) diode frequency multipliers. It is shown that at lower frequencies the experimental results achieved so far approach the theoretical limit of operation for the employed devices. However, at increasing frequencies the power drops with f-3 instead of the f-2 predicted by theory. In this contribution we provide an overview of state-of-the-art results. A comparison with theoretically achievable multiplier performance reveals that the devices employed at higher frequencies are operating inefficiently and the design and fabrication capabilities have not reached the maturity encountered at lower THz frequencies.

Original language	English
Title of host publication	Proceedings of 10th IEEE International Conference on Terahertz Electronics
Volume	4
Publisher	IEEE
Publication date	2002
ISBN (Print)	0-7803-7630-7
DOIs	https://doi.org/10.1109/THZ.2002.1037603
Publication status	Published - 2002
Event	10th IEEE International Conference on Terahertz Electronics - Cambridge, United Kingdom Duration: 10 Sept 2002 → 10 Sept 2002 Conference number: 10

Conference

Conference	10th IEEE International Conference on Terahertz Electronics
Number	10
Country/Territory	United Kingdom
City	Cambridge
Period	10/09/2002 → 10/09/2002

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Copyright: 2002 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE

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@inproceedings{882c447f68b24c3abbbbb05ff0c9715e,

title = "Limitations in THz Power Generation with Schottky Diode Varactor Frequency Multipliers",

abstract = "We discuss the limitations in power generation with Schottky diode and HBV (heterostructure barrier varactor) diode frequency multipliers. It is shown that at lower frequencies the experimental results achieved so far approach the theoretical limit of operation for the employed devices. However, at increasing frequencies the power drops with f-3 instead of the f-2 predicted by theory. In this contribution we provide an overview of state-of-the-art results. A comparison with theoretically achievable multiplier performance reveals that the devices employed at higher frequencies are operating inefficiently and the design and fabrication capabilities have not reached the maturity encountered at lower THz frequencies.",

author = "Viktor Krozer and G. Loata and J. Grajal",

note = "Copyright: 2002 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE; 10th IEEE International Conference on Terahertz Electronics ; Conference date: 10-09-2002 Through 10-09-2002",

year = "2002",

doi = "10.1109/THZ.2002.1037603",

language = "English",

isbn = "0-7803-7630-7",

volume = "4",

booktitle = "Proceedings of 10th IEEE International Conference on Terahertz Electronics",

publisher = "IEEE",

address = "United States",

}

TY - GEN

T1 - Limitations in THz Power Generation with Schottky Diode Varactor Frequency Multipliers

AU - Krozer, Viktor

AU - Loata, G.

AU - Grajal, J.

N1 - Conference code: 10

PY - 2002

Y1 - 2002

N2 - We discuss the limitations in power generation with Schottky diode and HBV (heterostructure barrier varactor) diode frequency multipliers. It is shown that at lower frequencies the experimental results achieved so far approach the theoretical limit of operation for the employed devices. However, at increasing frequencies the power drops with f-3 instead of the f-2 predicted by theory. In this contribution we provide an overview of state-of-the-art results. A comparison with theoretically achievable multiplier performance reveals that the devices employed at higher frequencies are operating inefficiently and the design and fabrication capabilities have not reached the maturity encountered at lower THz frequencies.

AB - We discuss the limitations in power generation with Schottky diode and HBV (heterostructure barrier varactor) diode frequency multipliers. It is shown that at lower frequencies the experimental results achieved so far approach the theoretical limit of operation for the employed devices. However, at increasing frequencies the power drops with f-3 instead of the f-2 predicted by theory. In this contribution we provide an overview of state-of-the-art results. A comparison with theoretically achievable multiplier performance reveals that the devices employed at higher frequencies are operating inefficiently and the design and fabrication capabilities have not reached the maturity encountered at lower THz frequencies.

U2 - 10.1109/THZ.2002.1037603

DO - 10.1109/THZ.2002.1037603

M3 - Article in proceedings

SN - 0-7803-7630-7

VL - 4

BT - Proceedings of 10th IEEE International Conference on Terahertz Electronics

PB - IEEE

T2 - 10th IEEE International Conference on Terahertz Electronics

Y2 - 10 September 2002 through 10 September 2002

ER -

Limitations in THz Power Generation with Schottky Diode Varactor Frequency Multipliers

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