Limitations in THz Power Generation with Schottky Diode Varactor Frequency Multipliers

Viktor Krozer, G. Loata, J. Grajal

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Abstract

We discuss the limitations in power generation with Schottky diode and HBV (heterostructure barrier varactor) diode frequency multipliers. It is shown that at lower frequencies the experimental results achieved so far approach the theoretical limit of operation for the employed devices. However, at increasing frequencies the power drops with f-3 instead of the f-2 predicted by theory. In this contribution we provide an overview of state-of-the-art results. A comparison with theoretically achievable multiplier performance reveals that the devices employed at higher frequencies are operating inefficiently and the design and fabrication capabilities have not reached the maturity encountered at lower THz frequencies.
Original languageEnglish
Title of host publicationProceedings of 10th IEEE International Conference on Terahertz Electronics
Volume4
PublisherIEEE
Publication date2002
ISBN (Print)0-7803-7630-7
DOIs
Publication statusPublished - 2002
Event10th IEEE International Conference on Terahertz Electronics - Cambridge, United Kingdom
Duration: 10 Sep 200210 Sep 2002
Conference number: 10

Conference

Conference10th IEEE International Conference on Terahertz Electronics
Number10
CountryUnited Kingdom
CityCambridge
Period10/09/200210/09/2002

Bibliographical note

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Cite this

Krozer, V., Loata, G., & Grajal, J. (2002). Limitations in THz Power Generation with Schottky Diode Varactor Frequency Multipliers. In Proceedings of 10th IEEE International Conference on Terahertz Electronics (Vol. 4). IEEE. https://doi.org/10.1109/THZ.2002.1037603