Lifetime of Nano-Structured Black Silicon for Photovoltaic Applications

Maksym Plakhotnyuk, Rasmus Schmidt Davidsen, Michael Stenbæk Schmidt, Radu Malureanu, Eugen Stamate, Ole Hansen

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

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Abstract

In this work, we present recent results of lifetime optimization for nano-structured black silicon and its
photovoltaic applications. Black silicon nano-structures provide significant reduction of silicon surface reflection due to highly corrugated nanostructures with excellent light trapping properties. We applied reactive ion etching technology at -20ºC to create nano-structures on silicon samples and obtained an average reflectance below 0.5%. For passivation purposes, we used 37 nm ALD Al2O3 films. Lifetime measurements resulted in 1220 µs and to 4170 µs for p- and ntype CZ silicon wafers, respectively. This is promising for use of black silicon RIE nano-structuring in a solar cell process flow
Original languageEnglish
Title of host publicationProceedings of 32nd European Photovoltaic Solar Energy Conference and Exhibition
Number of pages4
Publication date2016
Pages764-767
Publication statusPublished - 2016
Event32nd European Photovoltaic Solar Energy Conference and Exhibition - ICM - International Congress Center , Munich, Germany
Duration: 20 Jun 201624 Jun 2016
https://www.photovoltaic-conference.com/

Conference

Conference32nd European Photovoltaic Solar Energy Conference and Exhibition
LocationICM - International Congress Center
CountryGermany
CityMunich
Period20/06/201624/06/2016
Internet address

Keywords

  • c-Si
  • Black Silicon
  • ALD Al2O3
  • Passivation
  • Lifetime
  • Light trapping
  • Nano-structured silicon

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