Lattice-matched Cu2ZnSnS4/CeO2 solar cell with open circuit voltage boost

Andrea Crovetto; Chang Yan; Beniamino Iandolo; Fangzhou Zhou; John Stride; Jørgen Schou; Xiaojing Hao; Ole Hansen

doi:10.1063/1.4971779

Lattice-matched Cu₂ZnSnS₄/CeO₂ solar cell with open circuit voltage boost

Andrea Crovetto, Chang Yan, Beniamino Iandolo, Fangzhou Zhou, John Stride, Jørgen Schou, Xiaojing Hao, Ole Hansen

University of New South Wales

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Abstract

We report a reproducible enhancement of the open circuit voltage in Cu₂ZnSnS₄ solar cells by introduction of a very thin CeO2 interlayer between the Cu₂ZnSnS₄ absorber and the conventional CdS buffer. CeO₂, a non-toxic earth-abundant compound, has a nearly optimal band alignment with Cu₂ZnSnS₄ and the two materials are lattice-matched within 0.4%. This makes it possible to achieve an epitaxial interface when growing CeO₂ by chemical bath deposition at temperatures as low as 50 °C. The open circuit voltage improvement is then attributed to a decrease in the interface recombination rate through formation of a high-quality heterointerface.

Original language	English
Article number	233904
Journal	Applied Physics Letters
Volume	109
Number of pages	5
ISSN	0003-6951
DOIs	https://doi.org/10.1063/1.4971779
Publication status	Published - 2016

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10.1063/1.4971779

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COFUNDPostdocDTU: COFUNDPostdocDTU
Præstrud, M. R. & Brodersen, S. W.
01/01/2014 → 31/12/2019
Project: Research

Cite this

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title = "Lattice-matched Cu2ZnSnS4/CeO2 solar cell with open circuit voltage boost",

abstract = "We report a reproducible enhancement of the open circuit voltage in Cu2ZnSnS4 solar cells by introduction of a very thin CeO2 interlayer between the Cu2ZnSnS4 absorber and the conventional CdS buffer. CeO2, a non-toxic earth-abundant compound, has a nearly optimal band alignment with Cu2ZnSnS4 and the two materials are lattice-matched within 0.4%. This makes it possible to achieve an epitaxial interface when growing CeO2 by chemical bath deposition at temperatures as low as 50 °C. The open circuit voltage improvement is then attributed to a decrease in the interface recombination rate through formation of a high-quality heterointerface.",

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T1 - Lattice-matched Cu2ZnSnS4/CeO2 solar cell with open circuit voltage boost

AU - Crovetto, Andrea

AU - Yan, Chang

AU - Iandolo, Beniamino

AU - Zhou, Fangzhou

AU - Stride, John

AU - Schou, Jørgen

AU - Hao, Xiaojing

AU - Hansen, Ole

PY - 2016

Y1 - 2016

N2 - We report a reproducible enhancement of the open circuit voltage in Cu2ZnSnS4 solar cells by introduction of a very thin CeO2 interlayer between the Cu2ZnSnS4 absorber and the conventional CdS buffer. CeO2, a non-toxic earth-abundant compound, has a nearly optimal band alignment with Cu2ZnSnS4 and the two materials are lattice-matched within 0.4%. This makes it possible to achieve an epitaxial interface when growing CeO2 by chemical bath deposition at temperatures as low as 50 °C. The open circuit voltage improvement is then attributed to a decrease in the interface recombination rate through formation of a high-quality heterointerface.

AB - We report a reproducible enhancement of the open circuit voltage in Cu2ZnSnS4 solar cells by introduction of a very thin CeO2 interlayer between the Cu2ZnSnS4 absorber and the conventional CdS buffer. CeO2, a non-toxic earth-abundant compound, has a nearly optimal band alignment with Cu2ZnSnS4 and the two materials are lattice-matched within 0.4%. This makes it possible to achieve an epitaxial interface when growing CeO2 by chemical bath deposition at temperatures as low as 50 °C. The open circuit voltage improvement is then attributed to a decrease in the interface recombination rate through formation of a high-quality heterointerface.

U2 - 10.1063/1.4971779

DO - 10.1063/1.4971779

M3 - Journal article

SN - 0003-6951

VL - 109

JO - Applied Physics Letters

JF - Applied Physics Letters

M1 - 233904

ER -

Lattice-matched Cu2ZnSnS4/CeO2 solar cell with open circuit voltage boost

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Lattice-matched Cu₂ZnSnS₄/CeO₂ solar cell with open circuit voltage boost