Lateral boron distribution in polycrystalline SiC source materials

M. K. Linnarsson, M. Kaiser, R. Liljedahl, V. Jokubavicus, Yiyu Ou, P. Wellmann, Haiyan Ou, M. Syväjärvi

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

Abstract

Polycrystalline SiC containing boron and nitrogen are used in growth of fluorescent SiC for white LEDs. Two types of doped polycrystalline SiC have been studied in detail with secondary ion mass spectrometry: sintered SiC and poly-SiC prepared by sublimation in a physical vapor transport setup. The materials are co-doped materials with nitrogen and boron to a concentration of 1x1018 cm-3 and 1x1019 cm-3, respectively. Depth profiles as well as ion images have been recorded. According to ocular inspection, the analyzed poly-SiC consists mainly of 4H-SiC and 6H-SiC grains. In these grains, the boron concentration is higher and the nitrogen concentration is lower in the 6H-SiC compared to the 4H-SiC polytype. No inter-diffusion between grains is observed.
Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2012
Publication date2013
Pages397-400
ISBN (Print)9783037856246
DOIs
Publication statusPublished - 2013
EventEuropean Conference on Silicon Carbide and Related Materials (ECSCRM 2012) - Saint-Petersburg, Russian Federation
Duration: 2 Sep 20126 Sep 2012
https://www.ecscrm-2012.org/

Conference

ConferenceEuropean Conference on Silicon Carbide and Related Materials (ECSCRM 2012)
CountryRussian Federation
CitySaint-Petersburg
Period02/09/201206/09/2012
Internet address
SeriesMaterials Science Forum
Volume740-742
ISSN0255-5476

Cite this

Linnarsson, M. K., Kaiser, M., Liljedahl, R., Jokubavicus, V., Ou, Y., Wellmann, P., Ou, H., & Syväjärvi, M. (2013). Lateral boron distribution in polycrystalline SiC source materials. In Silicon Carbide and Related Materials 2012 (pp. 397-400). Materials Science Forum, Vol.. 740-742 https://doi.org/10.4028/www.scientific.net/MSF.740-742.397