Laser thermal annealing of Ge, optimized for highly activated dopants and diode ION/IOFF ratios

M. Shayesteh; D. O'Connell; F. Gity; F. Murphy-Armando; R. Yu; K. Huet; I. Toque-Tresonne; F. Cristiano; S. Boninelli; Henrik Hartmann Henrichsen; Dirch Hjorth Petersen; P. F. Nielsen; R. Duffy

doi:10.1109/IIT.2014.6939953

Laser thermal annealing of Ge, optimized for highly activated dopants and diode ION/IOFF ratios

M. Shayesteh, D. O'Connell, F. Gity, F. Murphy-Armando, R. Yu, K. Huet, I. Toque-Tresonne, F. Cristiano, S. Boninelli, Henrik Hartmann Henrichsen, Dirch Hjorth Petersen, P. F. Nielsen, R. Duffy

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

Abstract

The authors compared the influence of laser thermal annealing (LTA) and rapid thermal annealing (RTA) on dopant activation and electrical performance of phosphorus and arsenic doped n+/p junction. High carrier concentration above 1020 cm-3 as well as an ION/IOFF ratio of approximately 105 and ideality factor (n) approximately 1.2-1.5 was achieved with LTA. However RTA revealed very high ION/IOFF ratio approximately 107, and n close to 1. Non ideal behavior in LTA diodes is attributed to existence of deep level defects in the junction, contributing to leakage current. Meanwhile ideal behavior of RTA diodes is due to removal of defects in the junction during the high thermal budget.

Original language	English
Title of host publication	Proceedings of the 20th international conference on ion implantation technology
Number of pages	4
Publisher	IEEE
Publication date	2014
Pages	1-4
ISBN (Electronic)	9781479952120
DOIs	https://doi.org/10.1109/IIT.2014.6939953
Publication status	Published - 2014
Event	20th International Conference on Ion Implantation Technology - Portland, United States Duration: 26 Jun 2014 → 4 Jul 2014 Conference number: 20 http://www2.avs.org/conferences/IIT/2014/index.html

Conference

Conference	20th International Conference on Ion Implantation Technology
Number	20
Country/Territory	United States
City	Portland
Period	26/06/2014 → 04/07/2014
Internet address	http://www2.avs.org/conferences/IIT/2014/index.html

Keywords

Ge
Laser thermal annealing
Dopant activation
Junction
Leakage current
Ideality factor

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10.1109/IIT.2014.6939953

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Shayesteh, M., O'Connell, D., Gity, F., Murphy-Armando, F., Yu, R., Huet, K., Toque-Tresonne, I., Cristiano, F., Boninelli, S., Henrichsen, H. H., Petersen, D. H., Nielsen, P. F., & Duffy, R. (2014). Laser thermal annealing of Ge, optimized for highly activated dopants and diode ION/IOFF ratios. In Proceedings of the 20th international conference on ion implantation technology (pp. 1-4). IEEE. https://doi.org/10.1109/IIT.2014.6939953

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title = "Laser thermal annealing of Ge, optimized for highly activated dopants and diode ION/IOFF ratios",

abstract = "The authors compared the influence of laser thermal annealing (LTA) and rapid thermal annealing (RTA) on dopant activation and electrical performance of phosphorus and arsenic doped n+/p junction. High carrier concentration above 1020 cm-3 as well as an ION/IOFF ratio of approximately 105 and ideality factor (n) approximately 1.2-1.5 was achieved with LTA. However RTA revealed very high ION/IOFF ratio approximately 107, and n close to 1. Non ideal behavior in LTA diodes is attributed to existence of deep level defects in the junction, contributing to leakage current. Meanwhile ideal behavior of RTA diodes is due to removal of defects in the junction during the high thermal budget.",

keywords = "Ge, Laser thermal annealing, Dopant activation, Junction, Leakage current, Ideality factor",

author = "M. Shayesteh and D. O'Connell and F. Gity and F. Murphy-Armando and R. Yu and K. Huet and I. Toque-Tresonne and F. Cristiano and S. Boninelli and Henrichsen, {Henrik Hartmann} and Petersen, {Dirch Hjorth} and Nielsen, {P. F.} and R. Duffy",

year = "2014",

doi = "10.1109/IIT.2014.6939953",

language = "English",

pages = "1--4",

booktitle = "Proceedings of the 20th international conference on ion implantation technology",

publisher = "IEEE",

address = "United States",

note = " 20th International Conference on Ion Implantation Technology, IIT 2014 ; Conference date: 26-06-2014 Through 04-07-2014",

url = "http://www2.avs.org/conferences/IIT/2014/index.html",

}

Shayesteh, M, O'Connell, D, Gity, F, Murphy-Armando, F, Yu, R, Huet, K, Toque-Tresonne, I, Cristiano, F, Boninelli, S, Henrichsen, HH, Petersen, DH, Nielsen, PF & Duffy, R 2014, Laser thermal annealing of Ge, optimized for highly activated dopants and diode ION/IOFF ratios. in Proceedings of the 20th international conference on ion implantation technology. IEEE, pp. 1-4, 20th International Conference on Ion Implantation Technology, Portland, United States, 26/06/2014. https://doi.org/10.1109/IIT.2014.6939953

TY - GEN

T1 - Laser thermal annealing of Ge, optimized for highly activated dopants and diode ION/IOFF ratios

AU - Shayesteh, M.

AU - O'Connell, D.

AU - Gity, F.

AU - Murphy-Armando, F.

AU - Yu, R.

AU - Huet, K.

AU - Toque-Tresonne, I.

AU - Cristiano, F.

AU - Boninelli, S.

AU - Henrichsen, Henrik Hartmann

AU - Petersen, Dirch Hjorth

AU - Nielsen, P. F.

AU - Duffy, R.

N1 - Conference code: 20

PY - 2014

Y1 - 2014

N2 - The authors compared the influence of laser thermal annealing (LTA) and rapid thermal annealing (RTA) on dopant activation and electrical performance of phosphorus and arsenic doped n+/p junction. High carrier concentration above 1020 cm-3 as well as an ION/IOFF ratio of approximately 105 and ideality factor (n) approximately 1.2-1.5 was achieved with LTA. However RTA revealed very high ION/IOFF ratio approximately 107, and n close to 1. Non ideal behavior in LTA diodes is attributed to existence of deep level defects in the junction, contributing to leakage current. Meanwhile ideal behavior of RTA diodes is due to removal of defects in the junction during the high thermal budget.

AB - The authors compared the influence of laser thermal annealing (LTA) and rapid thermal annealing (RTA) on dopant activation and electrical performance of phosphorus and arsenic doped n+/p junction. High carrier concentration above 1020 cm-3 as well as an ION/IOFF ratio of approximately 105 and ideality factor (n) approximately 1.2-1.5 was achieved with LTA. However RTA revealed very high ION/IOFF ratio approximately 107, and n close to 1. Non ideal behavior in LTA diodes is attributed to existence of deep level defects in the junction, contributing to leakage current. Meanwhile ideal behavior of RTA diodes is due to removal of defects in the junction during the high thermal budget.

KW - Ge

KW - Laser thermal annealing

KW - Dopant activation

KW - Junction

KW - Leakage current

KW - Ideality factor

U2 - 10.1109/IIT.2014.6939953

DO - 10.1109/IIT.2014.6939953

M3 - Article in proceedings

SP - 1

EP - 4

BT - Proceedings of the 20th international conference on ion implantation technology

PB - IEEE

T2 - 20th International Conference on Ion Implantation Technology

Y2 - 26 June 2014 through 4 July 2014

ER -

Laser thermal annealing of Ge, optimized for highly activated dopants and diode ION/IOFF ratios

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