Laser thermal annealing of Ge, optimized for highly activated dopants and diode ION/IOFF ratios

M. Shayesteh, D. O'Connell, F. Gity, F. Murphy-Armando, R. Yu, K. Huet, I. Toque-Tresonne, F. Cristiano, S. Boninelli, Henrik Hartmann Henrichsen, Dirch Hjorth Petersen, P. F. Nielsen, R. Duffy

    Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

    Abstract

    The authors compared the influence of laser thermal annealing (LTA) and rapid thermal annealing (RTA) on dopant activation and electrical performance of phosphorus and arsenic doped n+/p junction. High carrier concentration above 1020 cm-3 as well as an ION/IOFF ratio of approximately 105 and ideality factor (n) approximately 1.2-1.5 was achieved with LTA. However RTA revealed very high ION/IOFF ratio approximately 107, and n close to 1. Non ideal behavior in LTA diodes is attributed to existence of deep level defects in the junction, contributing to leakage current. Meanwhile ideal behavior of RTA diodes is due to removal of defects in the junction during the high thermal budget.
    Original languageEnglish
    Title of host publicationProceedings of the 20th international conference on ion implantation technology
    Number of pages4
    PublisherIEEE
    Publication date2014
    Pages1-4
    ISBN (Electronic)9781479952120
    DOIs
    Publication statusPublished - 2014
    Event 20th International Conference on Ion Implantation Technology - Portland, United States
    Duration: 26 Jun 20144 Jul 2014
    Conference number: 20
    http://www2.avs.org/conferences/IIT/2014/index.html

    Conference

    Conference 20th International Conference on Ion Implantation Technology
    Number20
    CountryUnited States
    CityPortland
    Period26/06/201404/07/2014
    Internet address

    Keywords

    • Ge
    • Laser thermal annealing
    • Dopant activation
    • Junction
    • Leakage current
    • Ideality factor

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