Laser device

Il-Sug Chung (Inventor)

Research output: Patent

Abstract

The present invention provides a light source for light circuits on a silicon platform. A vertical laser cavity is formed by a gain region arranged between a first mirror structure and a second mirror structure, both acting as mirrors, by forming a grating region including an active material in a silicon layer in a semiconductor structure or wafer structure. A waveguide for receiving light from the region of the mirrors is formed within or to be connected to the region of the mirrors, and functions as an output coupler for the VCL. Thereby, vertical lasing modes are coupled to lateral in-plane modes of the in-plane waveguide formed in the silicon layer, and light can be provided to e.g. photonic circuits on a SOI or CMOS substrate in the silicon.
Original languageEnglish
IPCH01S5/02
Patent numberWO2013004241
Filing date10/01/2013
CountryInternational Bureau of the World Intellectual Property Organization (WIPO)
Priority date18/11/2011
Priority number US201161561634P
Publication statusPublished - 2013

Bibliographical note

Also published as: US2014198815, KR20140057536, EP2729997, CN103636084.

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