Large-signal PIN diode model for ultra-fast photodetectors

Viktor Krozer, C Fritsche

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    Abstract

    A large-signal model for PIN photodetector is presented, which can be applied to ultra-fast photodetection and THz signal generation. The model takes into account the tunnelling and avalanche breakdown, which is important for avalanche photodiodes. The model is applied to ultra-fast superlattice photodiodes for THz signal generation. Results show that the output power at THz frequencies is in the order of tens of μW. The embedding impedances are found to be as low as 13Ω.
    Original languageEnglish
    Title of host publicationEuropean Microwave Conference, 2005
    Volume2
    PublisherIEEE
    Publication date2005
    ISBN (Print)2-9600551-2-8
    DOIs
    Publication statusPublished - 2005
    Event35th European Microwave Conference - Paris, France
    Duration: 4 Oct 20056 Oct 2005
    Conference number: 35
    https://ieeexplore.ieee.org/xpl/conhome/10686/proceeding

    Conference

    Conference35th European Microwave Conference
    Number35
    Country/TerritoryFrance
    CityParis
    Period04/10/200506/10/2005
    Internet address

    Bibliographical note

    Copyright: 2005 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE

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