Large-signal PIN diode model for ultra-fast photodetectors

Viktor Krozer, C Fritsche

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Abstract

A large-signal model for PIN photodetector is presented, which can be applied to ultra-fast photodetection and THz signal generation. The model takes into account the tunnelling and avalanche breakdown, which is important for avalanche photodiodes. The model is applied to ultra-fast superlattice photodiodes for THz signal generation. Results show that the output power at THz frequencies is in the order of tens of μW. The embedding impedances are found to be as low as 13Ω.
Original languageEnglish
Title of host publicationEuropean Microwave Conference, 2005
Volume2
PublisherIEEE
Publication date2005
ISBN (Print)2-9600551-2-8
DOIs
Publication statusPublished - 2005
EventEuropean Microwave Conference, 2005 -
Duration: 1 Jan 2005 → …

Conference

ConferenceEuropean Microwave Conference, 2005
Period01/01/2005 → …

Bibliographical note

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Cite this

Krozer, V., & Fritsche, C. (2005). Large-signal PIN diode model for ultra-fast photodetectors. In European Microwave Conference, 2005 (Vol. 2). IEEE. https://doi.org/10.1109/EUMC.2005.1610152