Large-signal PIN diode model for ultra-fast photodetectors

Viktor Krozer; C Fritsche

doi:10.1109/EUMC.2005.1610152

Large-signal PIN diode model for ultra-fast photodetectors

Viktor Krozer, C Fritsche

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

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Abstract

A large-signal model for PIN photodetector is presented, which can be applied to ultra-fast photodetection and THz signal generation. The model takes into account the tunnelling and avalanche breakdown, which is important for avalanche photodiodes. The model is applied to ultra-fast superlattice photodiodes for THz signal generation. Results show that the output power at THz frequencies is in the order of tens of μW. The embedding impedances are found to be as low as 13Ω.

Original language	English
Title of host publication	European Microwave Conference, 2005
Volume	2
Publisher	IEEE
Publication date	2005
ISBN (Print)	2-9600551-2-8
DOIs	https://doi.org/10.1109/EUMC.2005.1610152
Publication status	Published - 2005
Event	European Microwave Conference, 2005 - Duration: 1 Jan 2005 → …

Conference

Conference	European Microwave Conference, 2005
Period	01/01/2005 → …

Bibliographical note

Copyright: 2005 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE

Access to Document

10.1109/EUMC.2005.1610152

FritscheFinal published version, 366 KB

Cite this

Krozer, V., & Fritsche, C. (2005). Large-signal PIN diode model for ultra-fast photodetectors. In European Microwave Conference, 2005 (Vol. 2). IEEE. https://doi.org/10.1109/EUMC.2005.1610152

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abstract = "A large-signal model for PIN photodetector is presented, which can be applied to ultra-fast photodetection and THz signal generation. The model takes into account the tunnelling and avalanche breakdown, which is important for avalanche photodiodes. The model is applied to ultra-fast superlattice photodiodes for THz signal generation. Results show that the output power at THz frequencies is in the order of tens of μW. The embedding impedances are found to be as low as 13Ω.",

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N2 - A large-signal model for PIN photodetector is presented, which can be applied to ultra-fast photodetection and THz signal generation. The model takes into account the tunnelling and avalanche breakdown, which is important for avalanche photodiodes. The model is applied to ultra-fast superlattice photodiodes for THz signal generation. Results show that the output power at THz frequencies is in the order of tens of μW. The embedding impedances are found to be as low as 13Ω.

AB - A large-signal model for PIN photodetector is presented, which can be applied to ultra-fast photodetection and THz signal generation. The model takes into account the tunnelling and avalanche breakdown, which is important for avalanche photodiodes. The model is applied to ultra-fast superlattice photodiodes for THz signal generation. Results show that the output power at THz frequencies is in the order of tens of μW. The embedding impedances are found to be as low as 13Ω.

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