Large-signal modeling of multi-finger InP DHBT devices at millimeter-wave frequencies

Tom Keinicke Johansen, Virginio Midili, Michele Squartecchia, Vitaliy Zhurbenko, Virginie Nodjiadjim, Jean‐Yves Dupuy, Muriel Riet, Agnieszka Konczykowska

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

Abstract

A large-signal modeling approach has been developed for multi-finger devices fabricated in an Indium Phosphide (InP) Double Heterojunction Bipolar Transistor (DHBT) process. The approach utilizes unit-finger device models embedded in a multi-port parasitic network. The unit-finger model is based on an improved UCSD HBT model formulation avoiding an erroneous RciCbci transit-time contribution from the intrinsic collector region as found in other III-V based HBT models. The mutual heating between fingers is modeled by a thermal coupling network with parameters extracted from electro-thermal simulations. The multi-finger modeling approach is verified against measurements on an 84 GHz power amplifier utilizing four finger InP DHBTs in a stacked configuration.
Original languageEnglish
Title of host publicationProceedings of 2017 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits
Number of pages3
PublisherIEEE
Publication date2017
ISBN (Print)978-1-5090-5862-4
DOIs
Publication statusPublished - 2017
Event2017 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits - Graz, Austria
Duration: 20 Apr 201721 Apr 2017

Conference

Conference2017 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits
CountryAustria
CityGraz
Period20/04/201721/04/2017

Keywords

  • Electro-thermal simulation
  • Heterojunction bipolar transistor (HBT)
  • Indium phosphide
  • Millimeter-wave monolithic integrated circuits
  • Modeling

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