Large-signal modeling of multi-finger InP DHBT devices at millimeter-wave frequencies

Tom Keinicke Johansen, Virginio Midili, Michele Squartecchia, Vitaliy Zhurbenko, Virginie Nodjiadjim, Jean‐Yves Dupuy, Muriel Riet, Agnieszka Konczykowska

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

Abstract

A large-signal modeling approach has been developed for multi-finger devices fabricated in an Indium Phosphide (InP) Double Heterojunction Bipolar Transistor (DHBT) process. The approach utilizes unit-finger device models embedded in a multi-port parasitic network. The unit-finger model is based on an improved UCSD HBT model formulation avoiding an erroneous RciCbci transit-time contribution from the intrinsic collector region as found in other III-V based HBT models. The mutual heating between fingers is modeled by a thermal coupling network with parameters extracted from electro-thermal simulations. The multi-finger modeling approach is verified against measurements on an 84 GHz power amplifier utilizing four finger InP DHBTs in a stacked configuration.
Original languageEnglish
Title of host publicationProceedings of 2017 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits
Number of pages3
PublisherIEEE
Publication date2017
ISBN (Print)978-1-5090-5862-4
DOIs
Publication statusPublished - 2017
Event2017 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits - Graz, Austria
Duration: 20 Apr 201721 Apr 2017

Conference

Conference2017 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits
CountryAustria
CityGraz
Period20/04/201721/04/2017

Keywords

  • Electro-thermal simulation
  • Heterojunction bipolar transistor (HBT)
  • Indium phosphide
  • Millimeter-wave monolithic integrated circuits
  • Modeling

Cite this

Johansen, T. K., Midili, V., Squartecchia, M., Zhurbenko, V., Nodjiadjim, V., Dupuy, JY., ... Konczykowska, A. (2017). Large-signal modeling of multi-finger InP DHBT devices at millimeter-wave frequencies. In Proceedings of 2017 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits IEEE. https://doi.org/10.1109/INMMIC.2017.7927301
Johansen, Tom Keinicke ; Midili, Virginio ; Squartecchia, Michele ; Zhurbenko, Vitaliy ; Nodjiadjim, Virginie ; Dupuy, Jean‐Yves ; Riet, Muriel ; Konczykowska, Agnieszka. / Large-signal modeling of multi-finger InP DHBT devices at millimeter-wave frequencies. Proceedings of 2017 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits. IEEE, 2017.
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title = "Large-signal modeling of multi-finger InP DHBT devices at millimeter-wave frequencies",
abstract = "A large-signal modeling approach has been developed for multi-finger devices fabricated in an Indium Phosphide (InP) Double Heterojunction Bipolar Transistor (DHBT) process. The approach utilizes unit-finger device models embedded in a multi-port parasitic network. The unit-finger model is based on an improved UCSD HBT model formulation avoiding an erroneous RciCbci transit-time contribution from the intrinsic collector region as found in other III-V based HBT models. The mutual heating between fingers is modeled by a thermal coupling network with parameters extracted from electro-thermal simulations. The multi-finger modeling approach is verified against measurements on an 84 GHz power amplifier utilizing four finger InP DHBTs in a stacked configuration.",
keywords = "Electro-thermal simulation, Heterojunction bipolar transistor (HBT), Indium phosphide, Millimeter-wave monolithic integrated circuits, Modeling",
author = "Johansen, {Tom Keinicke} and Virginio Midili and Michele Squartecchia and Vitaliy Zhurbenko and Virginie Nodjiadjim and Jean‐Yves Dupuy and Muriel Riet and Agnieszka Konczykowska",
year = "2017",
doi = "10.1109/INMMIC.2017.7927301",
language = "English",
isbn = "978-1-5090-5862-4",
booktitle = "Proceedings of 2017 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits",
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Johansen, TK, Midili, V, Squartecchia, M, Zhurbenko, V, Nodjiadjim, V, Dupuy, JY, Riet, M & Konczykowska, A 2017, Large-signal modeling of multi-finger InP DHBT devices at millimeter-wave frequencies. in Proceedings of 2017 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits. IEEE, 2017 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, Graz, Austria, 20/04/2017. https://doi.org/10.1109/INMMIC.2017.7927301

Large-signal modeling of multi-finger InP DHBT devices at millimeter-wave frequencies. / Johansen, Tom Keinicke; Midili, Virginio; Squartecchia, Michele; Zhurbenko, Vitaliy; Nodjiadjim, Virginie; Dupuy, Jean‐Yves; Riet, Muriel; Konczykowska, Agnieszka.

Proceedings of 2017 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits. IEEE, 2017.

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

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T1 - Large-signal modeling of multi-finger InP DHBT devices at millimeter-wave frequencies

AU - Johansen, Tom Keinicke

AU - Midili, Virginio

AU - Squartecchia, Michele

AU - Zhurbenko, Vitaliy

AU - Nodjiadjim, Virginie

AU - Dupuy, Jean‐Yves

AU - Riet, Muriel

AU - Konczykowska, Agnieszka

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N2 - A large-signal modeling approach has been developed for multi-finger devices fabricated in an Indium Phosphide (InP) Double Heterojunction Bipolar Transistor (DHBT) process. The approach utilizes unit-finger device models embedded in a multi-port parasitic network. The unit-finger model is based on an improved UCSD HBT model formulation avoiding an erroneous RciCbci transit-time contribution from the intrinsic collector region as found in other III-V based HBT models. The mutual heating between fingers is modeled by a thermal coupling network with parameters extracted from electro-thermal simulations. The multi-finger modeling approach is verified against measurements on an 84 GHz power amplifier utilizing four finger InP DHBTs in a stacked configuration.

AB - A large-signal modeling approach has been developed for multi-finger devices fabricated in an Indium Phosphide (InP) Double Heterojunction Bipolar Transistor (DHBT) process. The approach utilizes unit-finger device models embedded in a multi-port parasitic network. The unit-finger model is based on an improved UCSD HBT model formulation avoiding an erroneous RciCbci transit-time contribution from the intrinsic collector region as found in other III-V based HBT models. The mutual heating between fingers is modeled by a thermal coupling network with parameters extracted from electro-thermal simulations. The multi-finger modeling approach is verified against measurements on an 84 GHz power amplifier utilizing four finger InP DHBTs in a stacked configuration.

KW - Electro-thermal simulation

KW - Heterojunction bipolar transistor (HBT)

KW - Indium phosphide

KW - Millimeter-wave monolithic integrated circuits

KW - Modeling

U2 - 10.1109/INMMIC.2017.7927301

DO - 10.1109/INMMIC.2017.7927301

M3 - Article in proceedings

SN - 978-1-5090-5862-4

BT - Proceedings of 2017 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits

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Johansen TK, Midili V, Squartecchia M, Zhurbenko V, Nodjiadjim V, Dupuy JY et al. Large-signal modeling of multi-finger InP DHBT devices at millimeter-wave frequencies. In Proceedings of 2017 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits. IEEE. 2017 https://doi.org/10.1109/INMMIC.2017.7927301