Large-signal modeling of multi-finger InP DHBT devices at millimeter-wave frequencies

Tom Keinicke Johansen; Virginio Midili; Michele Squartecchia; Vitaliy Zhurbenko; Virginie Nodjiadjim; Jean‐Yves Dupuy; Muriel Riet; Agnieszka Konczykowska

doi:10.1109/INMMIC.2017.7927301

Large-signal modeling of multi-finger InP DHBT devices at millimeter-wave frequencies

Tom Keinicke Johansen, Virginio Midili, Michele Squartecchia, Vitaliy Zhurbenko, Virginie Nodjiadjim, Jean‐Yves Dupuy, Muriel Riet, Agnieszka Konczykowska

III-V Lab

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

Abstract

A large-signal modeling approach has been developed for multi-finger devices fabricated in an Indium Phosphide (InP) Double Heterojunction Bipolar Transistor (DHBT) process. The approach utilizes unit-finger device models embedded in a multi-port parasitic network. The unit-finger model is based on an improved UCSD HBT model formulation avoiding an erroneous RciCbci transit-time contribution from the intrinsic collector region as found in other III-V based HBT models. The mutual heating between fingers is modeled by a thermal coupling network with parameters extracted from electro-thermal simulations. The multi-finger modeling approach is verified against measurements on an 84 GHz power amplifier utilizing four finger InP DHBTs in a stacked configuration.

Original language	English
Title of host publication	Proceedings of 2017 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits
Number of pages	3
Publisher	IEEE
Publication date	2017
ISBN (Print)	978-1-5090-5862-4
DOIs	https://doi.org/10.1109/INMMIC.2017.7927301
Publication status	Published - 2017
Event	2017 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits - Graz, Austria Duration: 20 Apr 2017 → 21 Apr 2017

Conference

Conference	2017 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits
Country/Territory	Austria
City	Graz
Period	20/04/2017 → 21/04/2017

Keywords

Electro-thermal simulation
Heterojunction bipolar transistor (HBT)
Indium phosphide
Millimeter-wave monolithic integrated circuits
Modeling

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Johansen, T. K., Midili, V., Squartecchia, M., Zhurbenko, V., Nodjiadjim, V., Dupuy, JY., Riet, M., & Konczykowska, A. (2017). Large-signal modeling of multi-finger InP DHBT devices at millimeter-wave frequencies. In Proceedings of 2017 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits IEEE. https://doi.org/10.1109/INMMIC.2017.7927301

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title = "Large-signal modeling of multi-finger InP DHBT devices at millimeter-wave frequencies",

abstract = "A large-signal modeling approach has been developed for multi-finger devices fabricated in an Indium Phosphide (InP) Double Heterojunction Bipolar Transistor (DHBT) process. The approach utilizes unit-finger device models embedded in a multi-port parasitic network. The unit-finger model is based on an improved UCSD HBT model formulation avoiding an erroneous RciCbci transit-time contribution from the intrinsic collector region as found in other III-V based HBT models. The mutual heating between fingers is modeled by a thermal coupling network with parameters extracted from electro-thermal simulations. The multi-finger modeling approach is verified against measurements on an 84 GHz power amplifier utilizing four finger InP DHBTs in a stacked configuration.",

keywords = "Electro-thermal simulation, Heterojunction bipolar transistor (HBT), Indium phosphide, Millimeter-wave monolithic integrated circuits, Modeling ",

author = "Johansen, {Tom Keinicke} and Virginio Midili and Michele Squartecchia and Vitaliy Zhurbenko and Virginie Nodjiadjim and Jean‐Yves Dupuy and Muriel Riet and Agnieszka Konczykowska",

year = "2017",

doi = "10.1109/INMMIC.2017.7927301",

language = "English",

isbn = "978-1-5090-5862-4",

booktitle = "Proceedings of 2017 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits",

publisher = "IEEE",

address = "United States",

note = "2017 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, 2017 INMMiC ; Conference date: 20-04-2017 Through 21-04-2017",

}

Johansen, TK, Midili, V, Squartecchia, M, Zhurbenko, V, Nodjiadjim, V, Dupuy, JY, Riet, M & Konczykowska, A 2017, Large-signal modeling of multi-finger InP DHBT devices at millimeter-wave frequencies. in Proceedings of 2017 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits. IEEE, 2017 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, Graz, Austria, 20/04/2017. https://doi.org/10.1109/INMMIC.2017.7927301

Large-signal modeling of multi-finger InP DHBT devices at millimeter-wave frequencies. / Johansen, Tom Keinicke; Midili, Virginio; Squartecchia, Michele et al.
Proceedings of 2017 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits. IEEE, 2017.

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

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AU - Johansen, Tom Keinicke

AU - Midili, Virginio

AU - Squartecchia, Michele

AU - Zhurbenko, Vitaliy

AU - Nodjiadjim, Virginie

AU - Dupuy, Jean‐Yves

AU - Riet, Muriel

AU - Konczykowska, Agnieszka

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N2 - A large-signal modeling approach has been developed for multi-finger devices fabricated in an Indium Phosphide (InP) Double Heterojunction Bipolar Transistor (DHBT) process. The approach utilizes unit-finger device models embedded in a multi-port parasitic network. The unit-finger model is based on an improved UCSD HBT model formulation avoiding an erroneous RciCbci transit-time contribution from the intrinsic collector region as found in other III-V based HBT models. The mutual heating between fingers is modeled by a thermal coupling network with parameters extracted from electro-thermal simulations. The multi-finger modeling approach is verified against measurements on an 84 GHz power amplifier utilizing four finger InP DHBTs in a stacked configuration.

AB - A large-signal modeling approach has been developed for multi-finger devices fabricated in an Indium Phosphide (InP) Double Heterojunction Bipolar Transistor (DHBT) process. The approach utilizes unit-finger device models embedded in a multi-port parasitic network. The unit-finger model is based on an improved UCSD HBT model formulation avoiding an erroneous RciCbci transit-time contribution from the intrinsic collector region as found in other III-V based HBT models. The mutual heating between fingers is modeled by a thermal coupling network with parameters extracted from electro-thermal simulations. The multi-finger modeling approach is verified against measurements on an 84 GHz power amplifier utilizing four finger InP DHBTs in a stacked configuration.

KW - Electro-thermal simulation

KW - Heterojunction bipolar transistor (HBT)

KW - Indium phosphide

KW - Millimeter-wave monolithic integrated circuits

KW - Modeling

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Y2 - 20 April 2017 through 21 April 2017

ER -

Large-signal modeling of multi-finger InP DHBT devices at millimeter-wave frequencies

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Keywords

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