A large-signal modeling approach has been developed for multi-finger devices fabricated in an Indium Phosphide (InP) Double Heterojunction Bipolar Transistor (DHBT) process. The approach utilizes unit-finger device models embedded in a multi-port parasitic network. The unit-finger model is based on an improved UCSD HBT model formulation avoiding an erroneous RciCbci transit-time contribution from the intrinsic collector region as found in other III-V based HBT models. The mutual heating between fingers is modeled by a thermal coupling network with parameters extracted from electro-thermal simulations. The multi-finger modeling approach is verified against measurements on an 84 GHz power amplifier utilizing four finger InP DHBTs in a stacked configuration.
|Conference||2017 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits|
|Period||20/04/2017 → 21/04/2017|
- Electro-thermal simulation
- Heterojunction bipolar transistor (HBT)
- Indium phosphide
- Millimeter-wave monolithic integrated circuits