Large process-dependent variations in band alignment and interface band gaps of Cu2ZnSnS4/CdS solar cells

Research output: Contribution to journalJournal article – Annual report year: 2018Researchpeer-review

Standard

Large process-dependent variations in band alignment and interface band gaps of Cu2ZnSnS4/CdS solar cells. / Crovetto, Andrea; Cazzaniga, Andrea; Ettlinger, Rebecca Bolt; Schou, Jørgen; Hansen, Ole.

In: Solar Energy Materials and Solar Cells, Vol. 187, 2018, p. 233-240.

Research output: Contribution to journalJournal article – Annual report year: 2018Researchpeer-review

Harvard

APA

CBE

MLA

Vancouver

Author

Bibtex

@article{b55f7e3b8d304d93aba4ca9444410584,
title = "Large process-dependent variations in band alignment and interface band gaps of Cu2ZnSnS4/CdS solar cells",
abstract = "Electron–hole recombination at the Cu2ZnSnS4/CdS interface is believed to play a major role in limiting the efficiency of Cu2ZnSnS4 solar cells. In this work, we experimentally determine detailed Cu2ZnSnS4/CdS interface band diagrams as a function of process conditions, and correlate them to chemical processes occurring during interface formation and subsequent post-annealing. The newly devised experimental method involves a combination of photoemission spectroscopy and spectroscopic ellipsometry. Our measurements reveal that, under most process conditions, the band gaps of both Cu2ZnSnS4 and CdS decrease by several hundred meV near the interface. Furthermore, interface band bending and conduction band offsets are highly process-dependent and roughly correlated to the amount of chemical interdiffusion. The interface electronic properties are found to be unfavorable under all process conditions studied in this work, either due to a cliff-like conduction band offset, or to substantial band gap narrowing in Cu2ZnSnS4, or to both effects. According to the present study, the least harmful process conditions for the interface electronic properties are a low CdS deposition temperature without post-annealing. Even in such a case, a minimum open circuit voltage loss of 230 mV is expected due to interface- or near-interface recombination.",
keywords = "CZTS, Kesterite, Interface, Ellipsometry, Photoemission spectroscopy, Band alignment",
author = "Andrea Crovetto and Andrea Cazzaniga and Ettlinger, {Rebecca Bolt} and J{\o}rgen Schou and Ole Hansen",
year = "2018",
doi = "10.1016/j.solmat.2018.08.005",
language = "English",
volume = "187",
pages = "233--240",
journal = "Solar Energy Materials & Solar Cells",
issn = "0927-0248",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Large process-dependent variations in band alignment and interface band gaps of Cu2ZnSnS4/CdS solar cells

AU - Crovetto, Andrea

AU - Cazzaniga, Andrea

AU - Ettlinger, Rebecca Bolt

AU - Schou, Jørgen

AU - Hansen, Ole

PY - 2018

Y1 - 2018

N2 - Electron–hole recombination at the Cu2ZnSnS4/CdS interface is believed to play a major role in limiting the efficiency of Cu2ZnSnS4 solar cells. In this work, we experimentally determine detailed Cu2ZnSnS4/CdS interface band diagrams as a function of process conditions, and correlate them to chemical processes occurring during interface formation and subsequent post-annealing. The newly devised experimental method involves a combination of photoemission spectroscopy and spectroscopic ellipsometry. Our measurements reveal that, under most process conditions, the band gaps of both Cu2ZnSnS4 and CdS decrease by several hundred meV near the interface. Furthermore, interface band bending and conduction band offsets are highly process-dependent and roughly correlated to the amount of chemical interdiffusion. The interface electronic properties are found to be unfavorable under all process conditions studied in this work, either due to a cliff-like conduction band offset, or to substantial band gap narrowing in Cu2ZnSnS4, or to both effects. According to the present study, the least harmful process conditions for the interface electronic properties are a low CdS deposition temperature without post-annealing. Even in such a case, a minimum open circuit voltage loss of 230 mV is expected due to interface- or near-interface recombination.

AB - Electron–hole recombination at the Cu2ZnSnS4/CdS interface is believed to play a major role in limiting the efficiency of Cu2ZnSnS4 solar cells. In this work, we experimentally determine detailed Cu2ZnSnS4/CdS interface band diagrams as a function of process conditions, and correlate them to chemical processes occurring during interface formation and subsequent post-annealing. The newly devised experimental method involves a combination of photoemission spectroscopy and spectroscopic ellipsometry. Our measurements reveal that, under most process conditions, the band gaps of both Cu2ZnSnS4 and CdS decrease by several hundred meV near the interface. Furthermore, interface band bending and conduction band offsets are highly process-dependent and roughly correlated to the amount of chemical interdiffusion. The interface electronic properties are found to be unfavorable under all process conditions studied in this work, either due to a cliff-like conduction band offset, or to substantial band gap narrowing in Cu2ZnSnS4, or to both effects. According to the present study, the least harmful process conditions for the interface electronic properties are a low CdS deposition temperature without post-annealing. Even in such a case, a minimum open circuit voltage loss of 230 mV is expected due to interface- or near-interface recombination.

KW - CZTS

KW - Kesterite

KW - Interface

KW - Ellipsometry

KW - Photoemission spectroscopy

KW - Band alignment

U2 - 10.1016/j.solmat.2018.08.005

DO - 10.1016/j.solmat.2018.08.005

M3 - Journal article

VL - 187

SP - 233

EP - 240

JO - Solar Energy Materials & Solar Cells

JF - Solar Energy Materials & Solar Cells

SN - 0927-0248

ER -