Large area negative ion source based on matrix ECR cells for fast silicon etching

Eugen Stamate, A. Lacoste

    Research output: Chapter in Book/Report/Conference proceedingConference abstract in proceedingsResearchpeer-review

    Original languageEnglish
    Title of host publicationProceedings
    Publication date2009
    Pages49-50
    Publication statusPublished - 2009
    Event31st International Symposium on Dry Process - Busan, Korea, Republic of
    Duration: 24 Sep 200925 Sep 2009
    http://www.plasma.engg.nagoya-u.ac.jp/dps2009/

    Conference

    Conference31st International Symposium on Dry Process
    CountryKorea, Republic of
    CityBusan
    Period24/09/200925/09/2009
    Internet address

    Keywords

    • Plasma processing
    • Fusion energy

    Cite this

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    title = "Large area negative ion source based on matrix ECR cells for fast silicon etching",
    keywords = "Plasma processing, Fusion energy, Fusionsenergi, Plasmaprocessering",
    author = "Eugen Stamate and A. Lacoste",
    year = "2009",
    language = "English",
    pages = "49--50",
    booktitle = "Proceedings",

    }

    Stamate, E & Lacoste, A 2009, Large area negative ion source based on matrix ECR cells for fast silicon etching. in Proceedings. pp. 49-50, 31st International Symposium on Dry Process, Busan, Korea, Republic of, 24/09/2009.

    Large area negative ion source based on matrix ECR cells for fast silicon etching. / Stamate, Eugen; Lacoste, A.

    Proceedings. 2009. p. 49-50.

    Research output: Chapter in Book/Report/Conference proceedingConference abstract in proceedingsResearchpeer-review

    TY - ABST

    T1 - Large area negative ion source based on matrix ECR cells for fast silicon etching

    AU - Stamate, Eugen

    AU - Lacoste, A.

    PY - 2009

    Y1 - 2009

    KW - Plasma processing

    KW - Fusion energy

    KW - Fusionsenergi

    KW - Plasmaprocessering

    M3 - Conference abstract in proceedings

    SP - 49

    EP - 50

    BT - Proceedings

    ER -