Abstract
We propose and demonstrate an alternative type of photonic crystal laser design that shifts all the holes in the lattice by a fixed fraction of the targeted emission wavelength. The structures are realized in InGaAsP =1.15 with InGaAsP quantum wells =1.52 as gain material. Cavities with shifts of 1/4 and 3/4 of the emission wavelength were fabricated and characterized.
Measurements show threshold behavior for several modes at room temperature. Both structures are simulated using a finite difference time domain method to identify the resonances in the spectra and calculate the mode volume of the dominant mode.
Original language | English |
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Journal | Applied Physics Letters |
Volume | 97 |
Issue number | 19 |
Pages (from-to) | 191109 |
ISSN | 0003-6951 |
DOIs | |
Publication status | Published - 2010 |
Keywords
- III-V semiconductors
- laser modes
- semiconductor quantum wells
- gallium arsenide
- laser cavity resonators
- gallium compounds
- finite difference time-domain analysis
- quantum well lasers
- photonic crystals
- indium compounds