L1₀ phase transition in FePt thin films via direct interface reaction

Lowering the L1₀ ordering temperature of FePt films is of great significance for their application as an ultrahigh density magnetic recording medium. In this study, the L1₀ ordering process of FePt thin films deposited directly on Si substrates has been significantly accelerated by the interface reaction between the thin film and the Si substrate, and thus the thin films show a low L1(0) ordering temperature of T = 310 degrees C as compared with those deposited on Si/SiO₂ substrates. The accelerated L1₀ ordering transition is predominantly dependent on the rapid growth of the ordered domains during the interface reaction. The film thickness has an important effect on the interface reaction and thus can be used to tune the L1₀ ordering process of the FePt films.