Kinetic Study of the Chemical Vapor Deposition of Tantalum in Long Narrow Channels

James Atwoki Mugabi, Søren Eriksen, Irina Petrushina, Erik Christensen, Niels J. Bjerrum

Research output: Contribution to journalJournal articleResearchpeer-review

Abstract

A kinetic study of the chemical vapor deposition of tantalum in long narrow channels is done to optimize the industrial process for the manufacture of tantalum coated plate heat exchangers. The developed model fits well at temperatures between 750 and 850 °C, and in the pressure range of25–990 mbar. According to the model, the predominant tantalum growth species is TaCl3. The temperature is shown to have a pronounced effect onthe morphology and rate of deposition of the tantalum and an apparent change in deposition mechanism occurs between 850–900 °C, resulting in the deposition rate at 900 °C being lower than both 850 and 950 °C.
Original languageEnglish
JournalAdvanced Materials Interfaces
Volume3
Issue number14
Number of pages9
ISSN2196-7350
DOIs
Publication statusPublished - 2016

Keywords

  • CVD of tantalum; modeling of CVD
  • Morphology of tantalum CVD
  • Temperature dependence of CVD

Cite this

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title = "Kinetic Study of the Chemical Vapor Deposition of Tantalum in Long Narrow Channels",
abstract = "A kinetic study of the chemical vapor deposition of tantalum in long narrow channels is done to optimize the industrial process for the manufacture of tantalum coated plate heat exchangers. The developed model fits well at temperatures between 750 and 850 °C, and in the pressure range of25–990 mbar. According to the model, the predominant tantalum growth species is TaCl3. The temperature is shown to have a pronounced effect onthe morphology and rate of deposition of the tantalum and an apparent change in deposition mechanism occurs between 850–900 °C, resulting in the deposition rate at 900 °C being lower than both 850 and 950 °C.",
keywords = "CVD of tantalum; modeling of CVD, Morphology of tantalum CVD, Temperature dependence of CVD",
author = "Mugabi, {James Atwoki} and S{\o}ren Eriksen and Irina Petrushina and Erik Christensen and Bjerrum, {Niels J.}",
year = "2016",
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journal = "Advanced Materials Interfaces",
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Kinetic Study of the Chemical Vapor Deposition of Tantalum in Long Narrow Channels. / Mugabi, James Atwoki; Eriksen, Søren; Petrushina, Irina; Christensen, Erik; Bjerrum, Niels J.

In: Advanced Materials Interfaces, Vol. 3, No. 14, 2016.

Research output: Contribution to journalJournal articleResearchpeer-review

TY - JOUR

T1 - Kinetic Study of the Chemical Vapor Deposition of Tantalum in Long Narrow Channels

AU - Mugabi, James Atwoki

AU - Eriksen, Søren

AU - Petrushina, Irina

AU - Christensen, Erik

AU - Bjerrum, Niels J.

PY - 2016

Y1 - 2016

N2 - A kinetic study of the chemical vapor deposition of tantalum in long narrow channels is done to optimize the industrial process for the manufacture of tantalum coated plate heat exchangers. The developed model fits well at temperatures between 750 and 850 °C, and in the pressure range of25–990 mbar. According to the model, the predominant tantalum growth species is TaCl3. The temperature is shown to have a pronounced effect onthe morphology and rate of deposition of the tantalum and an apparent change in deposition mechanism occurs between 850–900 °C, resulting in the deposition rate at 900 °C being lower than both 850 and 950 °C.

AB - A kinetic study of the chemical vapor deposition of tantalum in long narrow channels is done to optimize the industrial process for the manufacture of tantalum coated plate heat exchangers. The developed model fits well at temperatures between 750 and 850 °C, and in the pressure range of25–990 mbar. According to the model, the predominant tantalum growth species is TaCl3. The temperature is shown to have a pronounced effect onthe morphology and rate of deposition of the tantalum and an apparent change in deposition mechanism occurs between 850–900 °C, resulting in the deposition rate at 900 °C being lower than both 850 and 950 °C.

KW - CVD of tantalum; modeling of CVD

KW - Morphology of tantalum CVD

KW - Temperature dependence of CVD

U2 - 10.1002/admi.201500795

DO - 10.1002/admi.201500795

M3 - Journal article

VL - 3

JO - Advanced Materials Interfaces

JF - Advanced Materials Interfaces

SN - 2196-7350

IS - 14

ER -