Key Techniques on Preparing High Aspect Ratio Micro and Nano Structures

Zhao Jian; Dong Lianhe; Zhu Xiaoli; Xie Changqing; Chen Baoqin; Peixiong Shi

doi:10.13250/j.cnki.wndz.2016.10.008

Key Techniques on Preparing High Aspect Ratio Micro and Nano Structures

Translated title of the contribution: Key Techniques on Preparing High Aspect Ratio Micro and Nano Structures

Zhao Jian, Dong Lianhe, Zhu Xiaoli, Xie Changqing, Chen Baoqin, Peixiong Shi

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Abstract

The HSQ has the advantages of high resolution, high contrast and low edge roughness. Through a lot of process experiments, the optimization conditions of the electron beam exposure dose, the proportion of the developer, the developing time and the developing temperature were explored. The relationship between electron beam exposure dose and line width was explored. The electron beam proximity effect in exposure generated by scattered electrons and backscattered electrons was effectively eliminated. Through adding appropriate NaCl in the conventional developer, the graphic contrast was improved effectively. The mechanism of action between NaCl and HSQ was analyzed. The collapse and adhesion of resist structure due to the effect of gas-liquid interfacial capillary surface tension were suppressed by the CO2 supercritical drying method. Large-area dense nano-structures with the aspect ratio of 12:1 and good steep sidewalls were obtained.

Translated title of the contribution	Key Techniques on Preparing High Aspect Ratio Micro and Nano Structures
Original language	Chinese
Journal	Wei-Na Dianzi Jishu
Volume	53
Issue number	10
Pages (from-to)	685-690
Number of pages	6
ISSN	1671-4776
DOIs	https://doi.org/10.13250/j.cnki.wndz.2016.10.008
Publication status	Published - 2016

Bibliographical note

In chinese

Keywords

Nanolithography
Other topics in materials science
Structure of solid clusters, nanoparticles, nanotubes and nanostructured materials
Fluid surface energy (surface tension, interface tension, angle of contact, etc.)
Nanometre-scale semiconductor fabrication technology
General fabrication techniques
Lithography (semiconductor technology)
adhesion
drying
electron beam lithography
microfabrication
nanofabrication
nanolithography
nanostructured materials
surface tension
CO2 supercritical drying
gas-liquid interfacial capillary surface tension
resist structure
graphic contrast
line width
electron beam exposure dose
developing temperature
developing time
developer
high aspect ratio nanostructures
high aspect ratio microstructures

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@article{26d21639d7f94edbb1f18ea9efc7a37c,

title = "Key Techniques on Preparing High Aspect Ratio Micro and Nano Structures",

abstract = "The HSQ has the advantages of high resolution, high contrast and low edge roughness. Through a lot of process experiments, the optimization conditions of the electron beam exposure dose, the proportion of the developer, the developing time and the developing temperature were explored. The relationship between electron beam exposure dose and line width was explored. The electron beam proximity effect in exposure generated by scattered electrons and backscattered electrons was effectively eliminated. Through adding appropriate NaCl in the conventional developer, the graphic contrast was improved effectively. The mechanism of action between NaCl and HSQ was analyzed. The collapse and adhesion of resist structure due to the effect of gas-liquid interfacial capillary surface tension were suppressed by the CO2 supercritical drying method. Large-area dense nano-structures with the aspect ratio of 12:1 and good steep sidewalls were obtained.",

keywords = "Nanolithography, Other topics in materials science, Structure of solid clusters, nanoparticles, nanotubes and nanostructured materials, Fluid surface energy (surface tension, interface tension, angle of contact, etc.), Nanometre-scale semiconductor fabrication technology, General fabrication techniques, Lithography (semiconductor technology), adhesion, drying, electron beam lithography, microfabrication, nanofabrication, nanolithography, nanostructured materials, surface tension, CO2 supercritical drying, gas-liquid interfacial capillary surface tension, resist structure, graphic contrast, line width, electron beam exposure dose, developing temperature, developing time, developer, high aspect ratio nanostructures, high aspect ratio microstructures",

author = "Zhao Jian and Dong Lianhe and Zhu Xiaoli and Xie Changqing and Chen Baoqin and Peixiong Shi",

note = "In chinese",

year = "2016",

doi = "10.13250/j.cnki.wndz.2016.10.008",

language = "Kinesisk",

volume = "53",

pages = "685--690",

journal = "Wei-Na Dianzi Jishu",

issn = "1671-4776",

publisher = "Wei-Na Dianzi Jishu Journal Press",

number = "10",

}

TY - JOUR

T1 - Key Techniques on Preparing High Aspect Ratio Micro and Nano Structures

AU - Jian, Zhao

AU - Lianhe, Dong

AU - Xiaoli, Zhu

AU - Changqing, Xie

AU - Baoqin, Chen

AU - Shi, Peixiong

N1 - In chinese

PY - 2016

Y1 - 2016

N2 - The HSQ has the advantages of high resolution, high contrast and low edge roughness. Through a lot of process experiments, the optimization conditions of the electron beam exposure dose, the proportion of the developer, the developing time and the developing temperature were explored. The relationship between electron beam exposure dose and line width was explored. The electron beam proximity effect in exposure generated by scattered electrons and backscattered electrons was effectively eliminated. Through adding appropriate NaCl in the conventional developer, the graphic contrast was improved effectively. The mechanism of action between NaCl and HSQ was analyzed. The collapse and adhesion of resist structure due to the effect of gas-liquid interfacial capillary surface tension were suppressed by the CO2 supercritical drying method. Large-area dense nano-structures with the aspect ratio of 12:1 and good steep sidewalls were obtained.

AB - The HSQ has the advantages of high resolution, high contrast and low edge roughness. Through a lot of process experiments, the optimization conditions of the electron beam exposure dose, the proportion of the developer, the developing time and the developing temperature were explored. The relationship between electron beam exposure dose and line width was explored. The electron beam proximity effect in exposure generated by scattered electrons and backscattered electrons was effectively eliminated. Through adding appropriate NaCl in the conventional developer, the graphic contrast was improved effectively. The mechanism of action between NaCl and HSQ was analyzed. The collapse and adhesion of resist structure due to the effect of gas-liquid interfacial capillary surface tension were suppressed by the CO2 supercritical drying method. Large-area dense nano-structures with the aspect ratio of 12:1 and good steep sidewalls were obtained.

KW - Nanolithography

KW - Other topics in materials science

KW - Structure of solid clusters, nanoparticles, nanotubes and nanostructured materials

KW - Fluid surface energy (surface tension, interface tension, angle of contact, etc.)

KW - Nanometre-scale semiconductor fabrication technology

KW - General fabrication techniques

KW - Lithography (semiconductor technology)

KW - adhesion

KW - drying

KW - electron beam lithography

KW - microfabrication

KW - nanofabrication

KW - nanolithography

KW - nanostructured materials

KW - surface tension

KW - CO2 supercritical drying

KW - gas-liquid interfacial capillary surface tension

KW - resist structure

KW - graphic contrast

KW - line width

KW - electron beam exposure dose

KW - developing temperature

KW - developing time

KW - developer

KW - high aspect ratio nanostructures

KW - high aspect ratio microstructures

U2 - 10.13250/j.cnki.wndz.2016.10.008

DO - 10.13250/j.cnki.wndz.2016.10.008

M3 - Tidsskriftartikel

SN - 1671-4776

VL - 53

SP - 685

EP - 690

JO - Wei-Na Dianzi Jishu

JF - Wei-Na Dianzi Jishu

IS - 10

ER -

Key Techniques on Preparing High Aspect Ratio Micro and Nano Structures

Abstract

Bibliographical note

Keywords

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