Key Techniques on Preparing High Aspect Ratio Micro and Nano Structures

Translated title of the contribution: Key Techniques on Preparing High Aspect Ratio Micro and Nano Structures

Zhao Jian, Dong Lianhe, Zhu Xiaoli, Xie Changqing, Chen Baoqin, Peixiong Shi

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    The HSQ has the advantages of high resolution, high contrast and low edge roughness. Through a lot of process experiments, the optimization conditions of the electron beam exposure dose, the proportion of the developer, the developing time and the developing temperature were explored. The relationship between electron beam exposure dose and line width was explored. The electron beam proximity effect in exposure generated by scattered electrons and backscattered electrons was effectively eliminated. Through adding appropriate NaCl in the conventional developer, the graphic contrast was improved effectively. The mechanism of action between NaCl and HSQ was analyzed. The collapse and adhesion of resist structure due to the effect of gas-liquid interfacial capillary surface tension were suppressed by the CO2 supercritical drying method. Large-area dense nano-structures with the aspect ratio of 12:1 and good steep sidewalls were obtained.
    Translated title of the contributionKey Techniques on Preparing High Aspect Ratio Micro and Nano Structures
    Original languageChinese
    JournalWei-Na Dianzi Jishu
    Issue number10
    Pages (from-to)685-690
    Number of pages6
    Publication statusPublished - 2016

    Bibliographical note

    In chinese


    • Nanolithography
    • Other topics in materials science
    • Structure of solid clusters, nanoparticles, nanotubes and nanostructured materials
    • Fluid surface energy (surface tension, interface tension, angle of contact, etc.)
    • Nanometre-scale semiconductor fabrication technology
    • General fabrication techniques
    • Lithography (semiconductor technology)
    • adhesion
    • drying
    • electron beam lithography
    • microfabrication
    • nanofabrication
    • nanolithography
    • nanostructured materials
    • surface tension
    • CO2 supercritical drying
    • gas-liquid interfacial capillary surface tension
    • resist structure
    • graphic contrast
    • line width
    • electron beam exposure dose
    • developing temperature
    • developing time
    • developer
    • high aspect ratio nanostructures
    • high aspect ratio microstructures


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