Junctions in Axial III-V Heterostructure Nanowires Obtained via an Interchange of Group III Elements

Peter Krogstrup, Jun Yamasaki, Claus B. Sørensen, Erik Johnson, Jakob Birkedal Wagner, Robert S. Pennington, Martin Aagesen, Nubuo Tanaka, Jesper Nygård

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    Abstract

    We present an investigation of the morphology and composition of novel types of axial nanowire heterostructures where GaxIn1-xAs is used as barrier material in InAs nanowires. Using aberration-corrected scanning transmission electron microscopy and energy dispersive X-ray analysis we demonstrate that it is possible to grow junctions by changing the group III elements, and we find that a substantial fraction of Ga can be incorporated in axial InAs/GaxIn1-xAs/InAs, retaining straight nanowire configurations. We explain how the adatoms are transferred to the incorporation site at the growth interface via two different routes, (1) interface diffusion and (2) volume diffusion through the catalyst particle.
    Original languageEnglish
    JournalNano Letters
    Volume9
    Issue number11
    Pages (from-to)3689
    ISSN1530-6984
    DOIs
    Publication statusPublished - 2009

    Cite this

    Krogstrup, P., Yamasaki, J., Sørensen, C. B., Johnson, E., Wagner, J. B., Pennington, R. S., Aagesen, M., Tanaka, N., & Nygård, J. (2009). Junctions in Axial III-V Heterostructure Nanowires Obtained via an Interchange of Group III Elements. Nano Letters, 9(11), 3689. https://doi.org/10.1021/nl901348d