Junction Temperature Correction Method for SiC MOSFET Based on Turn-Off Oscillation Frequency of Drain-Source Voltage

Mingxing Du, Fan Liu, Jinliang Yin, Chao Dong, Ziwei Ouyang

Research output: Contribution to journalJournal articleResearchpeer-review

19 Downloads (Pure)

Abstract

Turn-on change rate of drain current di DS(on)/dt is an electrical parameter suitable for online monitoring of junction temperature in SiC MOSFETs. In practical application, the change of the external circuit will change the temperature-sensitive characteristic of di DS(on)/dt. In this article, SiC MOSFET in Buck converter is taken as the research object. First, the influence of power loop inductance on diDS(on)/dt temperature sensitivity of SiC MOSFET is analyzed theoretically. Second, the relationship between the di DS(on)/dt of SiC MOSFET and the turn-off oscillation frequency of the drain-source voltage is established through the frequency spectrum of switching waveform with ringing. Based on theoretical and experimental studies, a method to modify the temperature-sensitive characteristic of di DS(on)/dt by turn-off oscillation frequency of drain-source voltage is proposed. The results show that the calibration method can largely eliminate the junction temperature monitoring error caused by the variation of the power loop inductance, and the maximum measurement error decreases from 100°C to 11.3°C after correction.
Original languageEnglish
JournalIEEE Transactions on Electron Devices
Volume71
Issue number10
Pages (from-to)6208-6215
ISSN0018-9383
DOIs
Publication statusPublished - 2024

Keywords

  • Frequency spectrum
  • SiC MOSFET
  • Junction temperature monitoring
  • Power loop inductance
  • Temperature-sensitive characteristic

Fingerprint

Dive into the research topics of 'Junction Temperature Correction Method for SiC MOSFET Based on Turn-Off Oscillation Frequency of Drain-Source Voltage'. Together they form a unique fingerprint.

Cite this