We present a new, preparation-free method for measuring the leakage current density on ultra-shallow junctions. The junction leakage is found by making a series of four-point sheet resistance measurements on blanket wafers with variable electrode spacings. The leakage current density is calculated using a fit of the measured four-point resistances to an analytical two-sheet model. The validity of the approximation involved in the two-sheet model is verified by a comparison to finite element model calculations.
|Journal||A I P Conference Proceedings Series|
|Publication status||Published - 2012|
|Event||International Conference on Ion Implantation Technology - Valladolid, Spain|
Duration: 25 Jun 2012 → 29 Jun 2012
Conference number: 19th
|Conference||International Conference on Ion Implantation Technology|
|Period||25/06/2012 → 29/06/2012|