Junction leakage measurements with micro four-point probes

Rong Lin, Dirch Hjorth Petersen, Fei Wang, Bradley R. Yates, Kevin S. Jones, Ole Hansen, Alex Kontos, Peter Folmer Nielsen

Research output: Contribution to journalConference articleResearchpeer-review

Abstract

We present a new, preparation-free method for measuring the leakage current density on ultra-shallow junctions. The junction leakage is found by making a series of four-point sheet resistance measurements on blanket wafers with variable electrode spacings. The leakage current density is calculated using a fit of the measured four-point resistances to an analytical two-sheet model. The validity of the approximation involved in the two-sheet model is verified by a comparison to finite element model calculations.
Original languageEnglish
JournalA I P Conference Proceedings Series
Volume1496
Pages (from-to)175-178
ISSN0094-243X
Publication statusPublished - 2012
EventInternational Conference on Ion Implantation Technology - Valladolid, Spain
Duration: 25 Jun 201229 Jun 2012
Conference number: 19th

Conference

ConferenceInternational Conference on Ion Implantation Technology
Number19th
Country/TerritorySpain
CityValladolid
Period25/06/201229/06/2012

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