Investigations of thin p-GaN light-emitting diodes with surface plasmon compatible metallization

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedings – Annual report year: 2016Researchpeer-review

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We investigate device performance of InGaN light-emitting diodes with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement.
Original languageEnglish
Title of host publication2016 Conference on Lasers and Electro-Optics
Number of pages2
PublisherOptical Society of America (OSA)
Publication date2016
Pages1-2
ISBN (Print)9781943580118
Publication statusPublished - 2016
EventConference on Lasers and Electro-Optics 2016 - San Jose, California, United States
Duration: 5 Jun 201610 Jun 2016

Conference

ConferenceConference on Lasers and Electro-Optics 2016
CountryUnited States
CitySan Jose, California
Period05/06/201610/06/2016
Series2016 Conference on Lasers and Electro-optics (cleo)

    Research areas

  • Light emitting diodes, Couplings, Plasmons, Metallization, Performance evaluation, Surface treatment

ID: 128074400