Investigations of thin p-GaN light-emitting diodes

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedings – Annual report year: 2016Researchpeer-review

Standard

Investigations of thin p-GaN light-emitting diodes. / Fadil, Ahmed; Ou, Yiyu; Iida, Daisuke; Kopylov, Oleksii; Ou, Haiyan.

CLEO: Science and Innovations 2016. Optical Society of America OSA, 2016.

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedings – Annual report year: 2016Researchpeer-review

Harvard

Fadil, A, Ou, Y, Iida, D, Kopylov, O & Ou, H 2016, Investigations of thin p-GaN light-emitting diodes. in CLEO: Science and Innovations 2016. Optical Society of America OSA, Conference on Lasers and Electro-Optics 2016, San Jose, California, United States, 05/06/2016. https://doi.org/10.1364/CLEO_SI.2016.STu3R.6

APA

Fadil, A., Ou, Y., Iida, D., Kopylov, O., & Ou, H. (2016). Investigations of thin p-GaN light-emitting diodes. In CLEO: Science and Innovations 2016 Optical Society of America OSA. https://doi.org/10.1364/CLEO_SI.2016.STu3R.6

CBE

Fadil A, Ou Y, Iida D, Kopylov O, Ou H. 2016. Investigations of thin p-GaN light-emitting diodes. In CLEO: Science and Innovations 2016. Optical Society of America OSA. https://doi.org/10.1364/CLEO_SI.2016.STu3R.6

MLA

Fadil, Ahmed et al. "Investigations of thin p-GaN light-emitting diodes". CLEO: Science and Innovations 2016. Optical Society of America OSA. 2016. https://doi.org/10.1364/CLEO_SI.2016.STu3R.6

Vancouver

Fadil A, Ou Y, Iida D, Kopylov O, Ou H. Investigations of thin p-GaN light-emitting diodes. In CLEO: Science and Innovations 2016. Optical Society of America OSA. 2016 https://doi.org/10.1364/CLEO_SI.2016.STu3R.6

Author

Fadil, Ahmed ; Ou, Yiyu ; Iida, Daisuke ; Kopylov, Oleksii ; Ou, Haiyan. / Investigations of thin p-GaN light-emitting diodes. CLEO: Science and Innovations 2016. Optical Society of America OSA, 2016.

Bibtex

@inproceedings{ec0c3845243c403aa6907e06f4ef39c3,
title = "Investigations of thin p-GaN light-emitting diodes",
abstract = "We investigate device performance of InGaN light-emitting diodes with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement.",
author = "Ahmed Fadil and Yiyu Ou and Daisuke Iida and Oleksii Kopylov and Haiyan Ou",
note = "From the session: UV and Visible Optoelectronics (STu3R)",
year = "2016",
doi = "10.1364/CLEO_SI.2016.STu3R.6",
language = "English",
isbn = "978-1-943580-11-8",
booktitle = "CLEO: Science and Innovations 2016",
publisher = "Optical Society of America OSA",

}

RIS

TY - GEN

T1 - Investigations of thin p-GaN light-emitting diodes

AU - Fadil, Ahmed

AU - Ou, Yiyu

AU - Iida, Daisuke

AU - Kopylov, Oleksii

AU - Ou, Haiyan

N1 - From the session: UV and Visible Optoelectronics (STu3R)

PY - 2016

Y1 - 2016

N2 - We investigate device performance of InGaN light-emitting diodes with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement.

AB - We investigate device performance of InGaN light-emitting diodes with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement.

U2 - 10.1364/CLEO_SI.2016.STu3R.6

DO - 10.1364/CLEO_SI.2016.STu3R.6

M3 - Article in proceedings

SN - 978-1-943580-11-8

BT - CLEO: Science and Innovations 2016

PB - Optical Society of America OSA

ER -