Investigations of thin p-GaN light-emitting diodes

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedings – Annual report year: 2016Researchpeer-review

View graph of relations

We investigate device performance of InGaN light-emitting diodes with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement.
Original languageEnglish
Title of host publicationCLEO: Science and Innovations 2016
Number of pages2
PublisherOptical Society of America OSA
Publication date2016
ISBN (Print)978-1-943580-11-8
DOIs
Publication statusPublished - 2016
EventConference on Lasers and Electro-Optics 2016 - San Jose, California, United States
Duration: 5 Jun 201610 Jun 2016

Conference

ConferenceConference on Lasers and Electro-Optics 2016
CountryUnited States
CitySan Jose, California
Period05/06/201610/06/2016

Bibliographical note

From the session: UV and Visible Optoelectronics (STu3R)

CitationsWeb of Science® Times Cited: No match on DOI

ID: 124271473