Abstract
We investigate device performance of InGaN light-emitting diodes with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement.
| Original language | English |
|---|---|
| Title of host publication | 2016 Conference on Lasers and Electro-Optics |
| Number of pages | 2 |
| Publisher | Optical Society of America (OSA) |
| Publication date | 2016 |
| ISBN (Print) | 978-1-943580-11-8 |
| DOIs | |
| Publication status | Published - 2016 |
| Event | 2016 Conference on Lasers and Electro-Optics - San Jose McEnery Convention Center, San Jose, United States Duration: 5 Jun 2016 → 10 Jun 2016 http://www.cleoconference.org |
Conference
| Conference | 2016 Conference on Lasers and Electro-Optics |
|---|---|
| Location | San Jose McEnery Convention Center |
| Country/Territory | United States |
| City | San Jose |
| Period | 05/06/2016 → 10/06/2016 |
| Internet address |
Bibliographical note
From the session: UV and Visible Optoelectronics (STu3R)Keywords
- Light emitting diodes
- Couplings
- Plasmons
- Metallization
- Performance evaluation
- Surface treatment
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