Investigations of thin p-GaN light-emitting diodes with surface plasmon compatible metallization

Ahmed Fadil, Yiyu Ou, Daisuke Iida, Oleksii Kopylov, Haiyan Ou

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review


We investigate device performance of InGaN light-emitting diodes with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement.
Original languageEnglish
Title of host publication2016 Conference on Lasers and Electro-Optics
Number of pages2
PublisherOptical Society of America (OSA)
Publication date2016
ISBN (Print)978-1-943580-11-8
Publication statusPublished - 2016
EventConference on Lasers and Electro-Optics 2016 - San Jose, California, United States
Duration: 5 Jun 201610 Jun 2016


ConferenceConference on Lasers and Electro-Optics 2016
Country/TerritoryUnited States
CitySan Jose, California

Bibliographical note

From the session: UV and Visible Optoelectronics (STu3R)


  • Light emitting diodes
  • Couplings
  • Plasmons
  • Metallization
  • Performance evaluation
  • Surface treatment


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