Investigations of thin p-GaN light-emitting diodes with surface plasmon compatible metallization

Ahmed Fadil; Yiyu Ou; Daisuke Iida; Oleksii Kopylov; Haiyan Ou

doi:10.1364/CLEO_SI.2016.STu3R.6

Investigations of thin p-GaN light-emitting diodes with surface plasmon compatible metallization

Ahmed Fadil, Yiyu Ou, Daisuke Iida, Oleksii Kopylov, Haiyan Ou

Tokyo University of Science

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

Abstract

We investigate device performance of InGaN light-emitting diodes with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement.

Original language	English
Title of host publication	2016 Conference on Lasers and Electro-Optics
Number of pages	2
Publisher	Optical Society of America (OSA)
Publication date	2016
ISBN (Print)	978-1-943580-11-8
DOIs	https://doi.org/10.1364/CLEO_SI.2016.STu3R.6
Publication status	Published - 2016
Event	2016 Conference on Lasers and Electro-Optics - San Jose McEnery Convention Center, San Jose, United States Duration: 5 Jun 2016 → 10 Jun 2016 http://www.cleoconference.org

Conference

Conference	2016 Conference on Lasers and Electro-Optics
Location	San Jose McEnery Convention Center
Country/Territory	United States
City	San Jose
Period	05/06/2016 → 10/06/2016
Internet address	http://www.cleoconference.org

Bibliographical note

From the session: UV and Visible Optoelectronics (STu3R)

Keywords

Light emitting diodes
Couplings
Plasmons
Metallization
Performance evaluation
Surface treatment

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10.1364/CLEO_SI.2016.STu3R.6

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@inproceedings{ec0c3845243c403aa6907e06f4ef39c3,

title = "Investigations of thin p-GaN light-emitting diodes with surface plasmon compatible metallization",

abstract = "We investigate device performance of InGaN light-emitting diodes with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement.",

keywords = "Light emitting diodes, Couplings, Plasmons, Metallization, Performance evaluation, Surface treatment",

author = "Ahmed Fadil and Yiyu Ou and Daisuke Iida and Oleksii Kopylov and Haiyan Ou",

note = "From the session: UV and Visible Optoelectronics (STu3R); 2016 Conference on Lasers and Electro-Optics, CLEO ; Conference date: 05-06-2016 Through 10-06-2016",

year = "2016",

doi = "10.1364/CLEO_SI.2016.STu3R.6",

language = "English",

isbn = "978-1-943580-11-8",

booktitle = "2016 Conference on Lasers and Electro-Optics",

publisher = "Optical Society of America (OSA)",

url = "http://www.cleoconference.org",

}

Fadil, A, Ou, Y, Iida, D, Kopylov, O & Ou, H 2016, Investigations of thin p-GaN light-emitting diodes with surface plasmon compatible metallization. in 2016 Conference on Lasers and Electro-Optics. Optical Society of America (OSA), 2016 Conference on Lasers and Electro-Optics, San Jose, California, United States, 05/06/2016. https://doi.org/10.1364/CLEO_SI.2016.STu3R.6

TY - GEN

T1 - Investigations of thin p-GaN light-emitting diodes with surface plasmon compatible metallization

AU - Fadil, Ahmed

AU - Ou, Yiyu

AU - Iida, Daisuke

AU - Kopylov, Oleksii

AU - Ou, Haiyan

N1 - From the session: UV and Visible Optoelectronics (STu3R)

PY - 2016

Y1 - 2016

N2 - We investigate device performance of InGaN light-emitting diodes with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement.

AB - We investigate device performance of InGaN light-emitting diodes with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement.

KW - Light emitting diodes

KW - Couplings

KW - Plasmons

KW - Metallization

KW - Performance evaluation

KW - Surface treatment

U2 - 10.1364/CLEO_SI.2016.STu3R.6

DO - 10.1364/CLEO_SI.2016.STu3R.6

M3 - Article in proceedings

SN - 978-1-943580-11-8

BT - 2016 Conference on Lasers and Electro-Optics

PB - Optical Society of America (OSA)

T2 - 2016 Conference on Lasers and Electro-Optics

Y2 - 5 June 2016 through 10 June 2016

ER -

Investigations of thin p-GaN light-emitting diodes with surface plasmon compatible metallization

Abstract

Conference

Bibliographical note

Keywords

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