Investigation of Top/Bottom electrode and Diffusion Barrier Layer for PZT Thick Film MEMS Sensors

Christian Carstensen Hindrichsen; Thomas Pedersen; Erik Vilain Thomsen

doi:10.1080/00150190802375441

Investigation of Top/Bottom electrode and Diffusion Barrier Layer for PZT Thick Film MEMS Sensors

Christian Carstensen Hindrichsen, Thomas Pedersen, Erik Vilain Thomsen

Research output: Contribution to journal › Journal article › Research › peer-review

Abstract

Top and bottom electrodes for screen printed piezoelectric lead zirconate titanate, Pb(ZrxTi1 - x)O3 (PZT) thick film are investigated with respect to future MEMS devices. Down to 100 nm thick E-beam evaporated Al and Pt films are patterned as top electrodes on the PZT using a lift-off process with a line width down to 3 μ m. A 700 nm thick ZrO2 layer as insolating diffusion barrier layer is found to be insufficient as barrier layer for PZT on a silicon substrate sintered at 850°C. EDX shows diffusion of Si into the PZT layer.

Original language	English
Journal	Ferroelectrics
Volume	367
Issue number	1
Pages (from-to)	201-213
ISSN	0015-0193
DOIs	https://doi.org/10.1080/00150190802375441
Publication status	Published - 2008

Keywords

PZT thick film
top electrode
bottom electrode
MEMS
accelerometer
pMUT″

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title = "Investigation of Top/Bottom electrode and Diffusion Barrier Layer for PZT Thick Film MEMS Sensors",

abstract = "Top and bottom electrodes for screen printed piezoelectric lead zirconate titanate, Pb(ZrxTi1 - x)O3 (PZT) thick film are investigated with respect to future MEMS devices. Down to 100 nm thick E-beam evaporated Al and Pt films are patterned as top electrodes on the PZT using a lift-off process with a line width down to 3 μ m. A 700 nm thick ZrO2 layer as insolating diffusion barrier layer is found to be insufficient as barrier layer for PZT on a silicon substrate sintered at 850°C. EDX shows diffusion of Si into the PZT layer.",

keywords = "PZT thick film, top electrode, bottom electrode, MEMS, accelerometer, pMUT″",

author = "Hindrichsen, {Christian Carstensen} and Thomas Pedersen and Thomsen, {Erik Vilain}",

year = "2008",

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AU - Hindrichsen, Christian Carstensen

AU - Pedersen, Thomas

AU - Thomsen, Erik Vilain

PY - 2008

Y1 - 2008

N2 - Top and bottom electrodes for screen printed piezoelectric lead zirconate titanate, Pb(ZrxTi1 - x)O3 (PZT) thick film are investigated with respect to future MEMS devices. Down to 100 nm thick E-beam evaporated Al and Pt films are patterned as top electrodes on the PZT using a lift-off process with a line width down to 3 μ m. A 700 nm thick ZrO2 layer as insolating diffusion barrier layer is found to be insufficient as barrier layer for PZT on a silicon substrate sintered at 850°C. EDX shows diffusion of Si into the PZT layer.

AB - Top and bottom electrodes for screen printed piezoelectric lead zirconate titanate, Pb(ZrxTi1 - x)O3 (PZT) thick film are investigated with respect to future MEMS devices. Down to 100 nm thick E-beam evaporated Al and Pt films are patterned as top electrodes on the PZT using a lift-off process with a line width down to 3 μ m. A 700 nm thick ZrO2 layer as insolating diffusion barrier layer is found to be insufficient as barrier layer for PZT on a silicon substrate sintered at 850°C. EDX shows diffusion of Si into the PZT layer.

KW - PZT thick film

KW - top electrode

KW - bottom electrode

KW - MEMS

KW - accelerometer

KW - pMUT″

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DO - 10.1080/00150190802375441

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JF - Ferroelectrics

SN - 0015-0193

IS - 1

ER -

Investigation of Top/Bottom electrode and Diffusion Barrier Layer for PZT Thick Film MEMS Sensors

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Keywords

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