Abstract
| Original language | English |
|---|---|
| Journal | Journal of Electroceramics |
| Volume | 25 |
| Issue number | 2-4 |
| Pages (from-to) | 150-158 |
| ISSN | 1385-3449 |
| DOIs | |
| Publication status | Published - 2010 |
Keywords
- Thick film
- MEMS device
- Top electrode
- Piezoelectric
- PZT
Cite this
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Investigation of top electrode for PZT thick films based MEMS sensors. / Hindrichsen, Christian Carstensen; Pedersen, Thomas; Kristiansen, Paw T.; Lou-Moller, Rasmus; Hansen, Karsten; Thomsen, Erik Vilain.
In: Journal of Electroceramics, Vol. 25, No. 2-4, 2010, p. 150-158.Research output: Contribution to journal › Journal article › Research › peer-review
TY - JOUR
T1 - Investigation of top electrode for PZT thick films based MEMS sensors
AU - Hindrichsen, Christian Carstensen
AU - Pedersen, Thomas
AU - Kristiansen, Paw T.
AU - Lou-Moller, Rasmus
AU - Hansen, Karsten
AU - Thomsen, Erik Vilain
PY - 2010
Y1 - 2010
N2 - In this work processing of screen printed piezoelectric PZT thick films on silicon substrates is investigated for use in future MEMS devices. E-beam evaporated Al and Pt are patterned on PZT as a top electrode using a lift-off process with a line width down to 3 mu m. Three test structures are used to investigate the optimal thickness of the top electrode, the degradation of the piezoelectric properties of the PZT film in absence of a diffusion barrier layer and finally how to fabricate electrical interconnects down the edge of the PZT thick film. The roughness of the PZT is found to have a strong influence on the conductance of the top electrode influencing the optimal top electrode thickness. A 100 nm thick top electrode on the PZT thick film with a surface roughness of 273 nm has a 4.5 times higher resistance compared to a similar wire on a planar SiO2 surface which has a surface roughness of less than 10 nm. It is found that the piezoelectric properties of the PZT thick film are degraded up to 1,000 mu m away from a region of the PZT thick film that is exposed directly to the silicon substrate without a diffusion barrier layer. Finally, ferroelectric hysteresis loops are used to verify that the piezoelectric properties of the PZT thick film are unchanged after the processing of the top electrode.
AB - In this work processing of screen printed piezoelectric PZT thick films on silicon substrates is investigated for use in future MEMS devices. E-beam evaporated Al and Pt are patterned on PZT as a top electrode using a lift-off process with a line width down to 3 mu m. Three test structures are used to investigate the optimal thickness of the top electrode, the degradation of the piezoelectric properties of the PZT film in absence of a diffusion barrier layer and finally how to fabricate electrical interconnects down the edge of the PZT thick film. The roughness of the PZT is found to have a strong influence on the conductance of the top electrode influencing the optimal top electrode thickness. A 100 nm thick top electrode on the PZT thick film with a surface roughness of 273 nm has a 4.5 times higher resistance compared to a similar wire on a planar SiO2 surface which has a surface roughness of less than 10 nm. It is found that the piezoelectric properties of the PZT thick film are degraded up to 1,000 mu m away from a region of the PZT thick film that is exposed directly to the silicon substrate without a diffusion barrier layer. Finally, ferroelectric hysteresis loops are used to verify that the piezoelectric properties of the PZT thick film are unchanged after the processing of the top electrode.
KW - Thick film
KW - MEMS device
KW - Top electrode
KW - Piezoelectric
KW - PZT
U2 - 10.1007/s10832-010-9606-7
DO - 10.1007/s10832-010-9606-7
M3 - Journal article
VL - 25
SP - 150
EP - 158
JO - Journal of Electroceramics
JF - Journal of Electroceramics
SN - 1385-3449
IS - 2-4
ER -