Investigation of reactive-ion-etch-induced damage of InP/InGaAs multiple quantum wells by photoluminescence

O. M. Steffensen; Dan Birkedal; J. Hanberg; O. Albrektsen; S. W. Pang

doi:10.1063/1.360245

Investigation of reactive-ion-etch-induced damage of InP/InGaAs multiple quantum wells by photoluminescence

O. M. Steffensen, Dan Birkedal, J. Hanberg, O. Albrektsen, S. W. Pang

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Abstract

The effects of CH4/H2 reactive ion etching (RIE) on the optical properties of an InP/InGaAs multiple-quantum-well structure have been investigated by low-temperature photoluminescence (PL). The structure consisted of eight InGaAs quantum wells, lattice matched to InP, with nominal thicknesses of 0.5, 1, 2, 3, 5, 10, 20, and 70 monolayers, respectively, on top of a 200-nm-thick layer of InGaAs for calibration. The design of this structure allowed etch-induced damage depth to be obtained from the PL spectra due to the different confinement energies of the quantum wells. The samples showed no significant decrease of luminescence intensity after RIE. However, the observed shift and broadening of the PL peaks from the quantum wells indicate that intermixing of well and barrier material increased with etch time. ©1995 American Institute of Physics.

Original language	English
Journal	Journal of Applied Physics
Volume	78
Issue number	3
Pages (from-to)	1528-1532
ISSN	0021-8979
DOIs	https://doi.org/10.1063/1.360245
Publication status	Published - 1995

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Copyright (1995) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

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title = "Investigation of reactive-ion-etch-induced damage of InP/InGaAs multiple quantum wells by photoluminescence",

abstract = "The effects of CH4/H2 reactive ion etching (RIE) on the optical properties of an InP/InGaAs multiple-quantum-well structure have been investigated by low-temperature photoluminescence (PL). The structure consisted of eight InGaAs quantum wells, lattice matched to InP, with nominal thicknesses of 0.5, 1, 2, 3, 5, 10, 20, and 70 monolayers, respectively, on top of a 200-nm-thick layer of InGaAs for calibration. The design of this structure allowed etch-induced damage depth to be obtained from the PL spectra due to the different confinement energies of the quantum wells. The samples showed no significant decrease of luminescence intensity after RIE. However, the observed shift and broadening of the PL peaks from the quantum wells indicate that intermixing of well and barrier material increased with etch time. {\textcopyright}1995 American Institute of Physics.",

author = "Steffensen, {O. M.} and Dan Birkedal and J. Hanberg and O. Albrektsen and Pang, {S. W.}",

note = "Copyright (1995) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.",

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language = "English",

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T1 - Investigation of reactive-ion-etch-induced damage of InP/InGaAs multiple quantum wells by photoluminescence

AU - Steffensen, O. M.

AU - Birkedal, Dan

AU - Hanberg, J.

AU - Albrektsen, O.

AU - Pang, S. W.

N1 - Copyright (1995) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

PY - 1995

Y1 - 1995

N2 - The effects of CH4/H2 reactive ion etching (RIE) on the optical properties of an InP/InGaAs multiple-quantum-well structure have been investigated by low-temperature photoluminescence (PL). The structure consisted of eight InGaAs quantum wells, lattice matched to InP, with nominal thicknesses of 0.5, 1, 2, 3, 5, 10, 20, and 70 monolayers, respectively, on top of a 200-nm-thick layer of InGaAs for calibration. The design of this structure allowed etch-induced damage depth to be obtained from the PL spectra due to the different confinement energies of the quantum wells. The samples showed no significant decrease of luminescence intensity after RIE. However, the observed shift and broadening of the PL peaks from the quantum wells indicate that intermixing of well and barrier material increased with etch time. ©1995 American Institute of Physics.

AB - The effects of CH4/H2 reactive ion etching (RIE) on the optical properties of an InP/InGaAs multiple-quantum-well structure have been investigated by low-temperature photoluminescence (PL). The structure consisted of eight InGaAs quantum wells, lattice matched to InP, with nominal thicknesses of 0.5, 1, 2, 3, 5, 10, 20, and 70 monolayers, respectively, on top of a 200-nm-thick layer of InGaAs for calibration. The design of this structure allowed etch-induced damage depth to be obtained from the PL spectra due to the different confinement energies of the quantum wells. The samples showed no significant decrease of luminescence intensity after RIE. However, the observed shift and broadening of the PL peaks from the quantum wells indicate that intermixing of well and barrier material increased with etch time. ©1995 American Institute of Physics.

U2 - 10.1063/1.360245

DO - 10.1063/1.360245

M3 - Journal article

SN - 0021-8979

VL - 78

SP - 1528

EP - 1532

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 3

ER -

Investigation of reactive-ion-etch-induced damage of InP/InGaAs multiple quantum wells by photoluminescence

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